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Hall Switch. OCH168 Datasheet

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Hall Switch. OCH168 Datasheet
















OCH168 Switch. Datasheet pdf. Equivalent













Part

OCH168

Description

Ultra-sensitive Hall Switch



Feature


WWW.ORIENT-CHIP.COM OCH168/OCH168A Micr o Power, Ultra-sensitive Hall Switch General Description The OCH168(OCH16 8A) is an Integrated Hall effect sensor designed specifically to meet the requ irements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phone s, with battery operating voltages of 2 .4V~ 5.5V. Precise magnetic switching p oints and high tempe.
Manufacture

Orient Chip

Datasheet
Download OCH168 Datasheet


Orient Chip OCH168

OCH168; rature stability are achieved through th e unique design of the internal circuit . An onboard clock scheme is used to re duce the average operating current of t he IC. During the operate phase the IC compares the actual magnetic field dete cted with the internally compensated sw itching points. The output is switched at the end of each operating phase. Dur ing the Stand-by p.


Orient Chip OCH168

hase the output stage is latched and the current consumption of the device redu ced to some µA. The IC switching behav ior is Omnipolar, i.e. it can be switch ed on with either the North or South po le of a magnet. ◼ Typical Application ◼ Features ⚫ Micr .


Orient Chip OCH168

.





Part

OCH168

Description

Ultra-sensitive Hall Switch



Feature


WWW.ORIENT-CHIP.COM OCH168/OCH168A Micr o Power, Ultra-sensitive Hall Switch General Description The OCH168(OCH16 8A) is an Integrated Hall effect sensor designed specifically to meet the requ irements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phone s, with battery operating voltages of 2 .4V~ 5.5V. Precise magnetic switching p oints and high tempe.
Manufacture

Orient Chip

Datasheet
Download OCH168 Datasheet




 OCH168
OCH168/OCH168A
Micro Power, Ultra-sensitive Hall Switch
General Description
The OCH168(OCH168A) is an Integrated Hall effect
sensor designed specifically to meet the requirements of
low-power devices. e.g. as an On/Off switch in Cellular
Flip-Phones, with battery operating voltages of 2.4V~
5.5V.
Precise magnetic switching points and high temperature
stability are achieved through the unique design of the
internal circuit.
An onboard clock scheme is used to reduce the average
operating current of the IC.
During the operate phase the IC compares the actual
magnetic field detected with the internally
compensated switching points. The output is switched
at the end of each operating phase.
During the Stand-by phase the output stage is latched
and the current consumption of the device reduced to
some µA.
The IC switching behavior is Omnipolar, i.e. it can be
switched on with either the North or South pole of a
magnet.
Typical Application
Features
Micro power design
Operation with North or South pole(omni polar)
2.4V to 5.5V battery operation
High sensitivity and high stability of the magnetic
switching points
High resistance to mechanical stress
Digital output signal
Good RF noise immunity
-40to 85operating temperature
Package: SOT23-3L/TSOT23-3L/SIP3
Applications
Cellular Phone
PDA
Cordless Phone
33
-
0.1μF
GND
+ OCH168
-
0.1μF
GND
+ OCH168A
VDD
VOUT
12
R
OUTPUT
VDD
VOUT
12
R
OUTPUT
51K 2.7K
Pin Configuration
1) SOT23-3L
3
GND
VDD
1
OUTPUT
2
2) TSOT23-3L
3
GND
VDD
1
OUTPUT
2
Page 1 - 5
Rev. 1.6 . Feb .27, 2018
源于灿瑞 磁传天下




 OCH168
3) SIP3
OUTPUT
3
GND
2 VDD
1
OCH168/OCH168A
Micro Power, Ultra-sensitive Hall Switch
Block Diagram
Symbol
VDD
OUTPUT
GND
Function
Supply Voltage
Signal Output (Open Drain)
Ground
VDD
1
Awake & Sleep
Timing Logic
Hall Plane
2 OUTPUT
Chopper Hysteresis
Amplifier Latch
3 GND
Absolute Maximum Ratings
Parameter
Symbol
Maximum
Unit
Supply Voltage
VDD
5.5
V
Supply Current
IDD
2.5
mA
Output Voltage
VO
5.5
V
Output Current
IO
1
mA
Operating Temperature Range
TA
-40 to 85
Junction Temperature
TJ
-40 to 150
Storage Temperature
TSTG
-40 to 150
Magnetic Flux Density
B
unlimited
mT
Power Dissipation
PD
230
mW
Note: Stress above the listed absolute maximum rating may cause permanent damage to the device
Page 2 - 5
Rev. 1.6 . Feb .27, 2018
源于灿瑞 磁传天下




 OCH168
OCH168/OCH168A
Micro Power, Ultra-sensitive Hall Switch
Electrical Characteristics
Parameter
Averaged Supply Current
Supply Current
During Operating Time
Supply Current
During Standby Time
Output Saturation Voltage
Output Leakage Current
Operating Time
Standby Time
Duty Cycle
1) Operating voltage is 2.7V.
Symbol
IDD(AVG)
IDD(OP)
IDD(STB)
VO(SAT)
IO(LEAK)
TOP
TSTB
TOP / TSTB
Test Condition
IO=1mA
Min.
Operating Range
Parameter
Symbol
Min.
Typ.
Supply Voltage2)
VDD
2.4
2.7
Output Voltage VO -0.3
2.7
Ambient Temperature
TA
-40
25
2). A Ceramic Bypass Capacitor of 0.1uF at VDD to GND is highly recommended.
Magnetic Characteristics
Typ.
31)
1.11)
2.51)
0.1
0.01
56
140
0.04
Max.
20
-
-
0.3
1
Max.
5.5
5.5
85
Unit
uA
mA
uA
V
uA
us
ms
%
Unit
V
V
OCH168
Parameter
Operate Points
(Output ON)
Release Points
(Output OFF)
Hysteresis
OCH168A
Parameter
Operate Points
(Output ON)
Release Points
(Output OFF)
Hysteresis
If not other specified, typical characteristics apply at TA = 25 °C and VDD = 2.7 V
Symbol
Min.
Typ.
Max.
Unit
BOPS
40
55
70
G
BOPN
-70
-55
-40
G
BRPS
30
45
60
G
BRPN
-60
-45
-30
G
BHYS
5
10 15 G
If not other specified, typical characteristics apply at TA = 25 °C and VDD = 2.7 V
Symbol
Min.
Typ.
Max.
Unit
BOPS
15
25
35
G
BOPN
-35
-25
-15
G
BRPS
7
15 25 G
BRPN
-25
-15
-7
G
BHYS
5
10 15 G
Page 3 - 5
Rev. 1.6 . Feb .27, 2018
源于灿瑞 磁传天下




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