MD8IC925NR1

NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz  Typical single--carrier W--CDMA performance: VDD = 28 Vdc, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 W Avg., IQ magnitude clipping, channel bandwidth = 3.84 MHz, input signal PAR = 7.5 dB @ 0.01% probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 920 MHz 36.2 17.5 --48.9 940 MHz 36.2 17.4 --49.5 960 MHz 36.1 17.3 --49.1  Capable of handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 25 W CW output power (3 dB input overdrive from rated Pout) Driver Application — 700 MHz  Typical single--carrier W--CDMA performance: VDD = 28 Vdc, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 W Avg., IQ magnitude clipping...