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MD7IC2755GNR1

NXP

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated ...


NXP

MD7IC2755GNR1

File Download Download MD7IC2755GNR1 Datasheet


Description
Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on--chip matching that makes it usable from 2500 -- 2700 MHz. This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Typical Doherty WiMAX Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2B = 275 mA, VG2A = 1.7 Vdc, Pout = 10 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 25 dB Power Added Efficiency — 25% Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — --37 dBc in 1 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 90 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Stable into a 10:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts CW Pout Typical Pout @ 1 dB C...




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