TVS. PTVSHC2EN5VB Datasheet

PTVSHC2EN5VB TVS. Datasheet pdf. Equivalent


Prisemi PTVSHC2EN5VB
PTVSHC2EN5VB
Transient Voltage Suppressor
Description
The PTVSHC2EN5VB ESD protector is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDAs. They feature
large cross-sectional area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when compared to
MLVs. The PTVSHC2EN5VB protects sensitive semiconductor components from damage
or upset due to electrostatic discharge (ESD) and other voltage induced transient events.
The PTVSHC2EN5VB is available in a DFN1610-2L package with working voltages of 4.5
volt. It is used to meet the ESD immunity requirements of IEC 61000-4-2, (±30kV air,
±30kV contact discharge)
2
1
Feature
1500W Peak pulse power per line (tP = 8/20μs)
DFN1610-2L package
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping Voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A
(5/50ns)
Applications
Cell phone handsets and accessories
Personal digital assistants (PDAs)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Pure tin plating: 7 ~ 17 um
Pin flatness:3mil
Rev.06.2
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PTVSHC2EN5VB Datasheet
Recommendation PTVSHC2EN5VB Datasheet
Part PTVSHC2EN5VB
Description TVS
Feature PTVSHC2EN5VB; PTVSHC2EN5VB Transient Voltage Suppressor Description The PTVSHC2EN5VB ESD protector is designed to.
Manufacture Prisemi
Datasheet
Download PTVSHC2EN5VB Datasheet




Prisemi PTVSHC2EN5VB
Transient Voltage Suppressor
Electronics Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
CJ
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
PTVSHC2EN5VB
I
IPP
VC VBRVRWM
IT
IR
IR
IT
V
VRWM VBR VC
IPP
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Units
Peak Reverse Working
Voltage(PIN2~PIN1)
VRWM
5V
Breakdown Voltage(PIN2~PIN1)
Reverse Leakage Current(PIN2~PIN1)
VBR
IR
It = 1mA
VRWM = 5V T=25
5.4
6.5 V
1.0 μA
Breakdown Voltage(PIN1~PIN2)
VBR
It = 1mA
4.6
5.5 V
Reverse Leakage Current (PIN1~PIN2)
IR
VRWM = 4.5V T=25
2.0 μA
Clamping Voltage(PIN2~PIN1)
VC IPP=20A tP = 8/20μs
79V
Clamping Voltage(PIN2~PIN1)
VC IPP=50A tP = 8/20μs
8 10 V
Clamping Voltage(PIN2~PIN1)
VC IPP=100A tP = 8/20μs
9.6 12
V
Clamping Voltage(PIN2~PIN1)
VC IPP=140A tP = 8/20μs
11 14
V
Junction Capacitance
Cj VR=0V f = 1MHz
260 300
pF
Note 1: VRWM is the maximum reverse working voltage, or reverse stand-off voltage. ESD can protect signal line properly
within its rated voltage. If the signal line's voltage is over VRWM, ESD will change to other state.
Absolute maximum rating@25
Rating
Peak Pulse Power ( tP = 8/20μS )
Total Device Dissipation FR-5 Board
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Rev.06.2
Symbol
Ppp
PD
TL
TJ
TSTG
2
Value
1500
500
260 (10 sec)
-55 to +125
-55 to +150
Units
W
mW
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Prisemi PTVSHC2EN5VB
Transient Voltage Suppressor
Typical Characteristics
100
80
60
40
20
0
0
tf=8μs
tP =20μs(IPP /2)
5 10 15 20
t - Time -μs
Fig 1.Pulse Waveform
25 30
PTVSHC2EN5VB
100
80
60
40
20
0
0
25 50
75 100 125
TL Lead Temperature -
Fig 2.Power Derating Curve
150
16
Pulse waveform: tp=8/20us
10
0
0 40 80 120 160
IPP-Peak pulse current (A)
Fig 3. Clamping voltage vs. Peak pulse current
375
f=1MHz
300
225
150
75
0
01 2 34 5
VR-Reverse voltage (V)
Fig 4. Capacitance vs. Reveres voltage
10000
1000
100
10
1 10 100 1000
Pulse Duration(us)
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.2
3
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