TVS Protect. PTVSHC3D4V5B Datasheet

PTVSHC3D4V5B Protect. Datasheet pdf. Equivalent


Prisemi PTVSHC3D4V5B
PTVSHC3D4V5B
Bi-directional 4.5V High Capacitance TVS Protector
Description
The PTVSHC3D4V5B transient voltage suppressor is designed to replace
multilayer varistors (MLVs) in portable applications such as cell phones,
notebook computers, and PDA’s. They feature large cross-sectional area
junctions for conducting high transient currents, offer desirable electrical
characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when
compared to MLVs. The PTVSHC3D4V5B protects sensitive semiconductor
components from damage or upset due to electrostatic discharge (ESD) and
other voltage induced transient events. The PTVSHC3D4V5B is available in
a SOD-323 package with working voltages of 4.5 volt.
SOD-323(Top View)
Feature
2000W Peak pulse power per line (tP = 8/20μs)
SOD-323 package
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping Voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Applications
Cell phone handsets and accessories
Personal digital assistants (PDA’s)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Pin1
Pin2
Circuit Diagram
D4Pin1
Pin2
Marking (Top View)
Rev.06.8
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PTVSHC3D4V5B Datasheet
Recommendation PTVSHC3D4V5B Datasheet
Part PTVSHC3D4V5B
Description High Capacitance TVS Protect
Feature PTVSHC3D4V5B; PTVSHC3D4V5B Bi-directional 4.5V High Capacitance TVS Protector Description The PTVSHC3D4V5B transi.
Manufacture Prisemi
Datasheet
Download PTVSHC3D4V5B Datasheet




Prisemi PTVSHC3D4V5B
TVS Protector
Electronics Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
CJ
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
PTVSHC3D4V5B
I
IPP
VTRVIGHOVLDRWM
VC
IT
IR
IR
IT
VC
VRWM VHVOTLRDIG
V
IPP
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Units
Reverse Working Voltage(1)
VRWM
4.5 V
Breakdown Voltage(Pin1 to Pin2)
VBR
It =1mA
4.6 5.3 6.1
V
Reverse Leakage Current (Pin1 to Pin2)
IR
VRWM =4.5V
2 μA
Clamping Voltage(Pin1 to Pin2)
VC IPP=20A tP = 8/20μs
7.5 8.5
V
Clamping Voltage(Pin1 to Pin2)
VC IPP=45A tP = 8/20μs
8.8 10
V
Clamping Voltage(Pin1 to Pin2)
VC IPP=90A tP = 8/20μs
11 12.5
V
Clamping Voltage(Pin1 to Pin2)
VC IPP=130A tP = 8/20μs
14 16
V
Junction Capacitance
Cj VR=0V f = 1MHz
320 360
pF
Note 1: VRWM is the maximum reverse working voltage, or reverse stand-off voltage. ESD can protect signal line properly
within its rated voltage. If the signal line's voltage is over VRWM, ESD will change to other state.
Absolute maximum rating@25
Rating
Peak Pulse Power ( tP = 8/20μS )
Total Device Dissipation FR-5 Board
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
Ppp
PD
TL
TJ
TSTG
Value
2000
500
260 (10 sec)
-55 to 150
-55 to 150
Units
W
mW
Rev.06.8
2
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Prisemi PTVSHC3D4V5B
TVS Protector
Typical Characteristics
100
80
60
40
20
0
0
tf=8μs
tP =20μs(IPP /2)
5 10
15 20
t - Time -μs
Fig 1.Pulse Waveform
25 30
PTVSHC3D4V5B
100
80
60
40
20
0
0
25 50
75 100 125
TL – Lead Temperature -
Fig 2.Power Derating Curve
150
16
14 Pulse waveform: tp=8/20us
12
10
8
6
4
2
0
0 25 50 75 100 125 150
IPP-Peak pulse current (A)
Fig 3. Clamping voltage vs. Peak pulse current
375
f=1MHz
300
225
150
75
0
01 2 34 5
VR-Reverse voltage (V)
Fig 4. Capacitance vs. Reveres voltage
10000
1000
100
10
1 10 100 1000
Pulse Duration(us)
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.8
3
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