TVS Protect. PTVSHC3D4V5BL Datasheet

PTVSHC3D4V5BL Protect. Datasheet pdf. Equivalent


Prisemi PTVSHC3D4V5BL
PTVSHC3D4V5BL
TVS Protector
Description
The PTVSHC3D4V5BL ESD protector is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They feature
large cross-sectional area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when compared to
MLVs. The PTVSHC3D4V5BL protects sensitive semiconductor components from damage
or upset due to electrostatic discharge (ESD) and other voltage induced transient events.
The PTVSHC3D4V5BL is available in a SOD-323 package with working voltages of 4.5 volt.
It is used to meet the ESD immunity requirements of IEC 61000-4-2, (±30kV air, ±30kV
contact discharge)
Feature
Applications
1000W Peak pulse power per line (tP = 8/20μs)
SOD-323 package
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping Voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Cell phone handsets and accessories
Personal digital assistants (PDA’s)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Rev.06.2
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PTVSHC3D4V5BL Datasheet
Recommendation PTVSHC3D4V5BL Datasheet
Part PTVSHC3D4V5BL
Description TVS Protect
Feature PTVSHC3D4V5BL; PTVSHC3D4V5BL TVS Protector Description The PTVSHC3D4V5BL ESD protector is designed to replace multi.
Manufacture Prisemi
Datasheet
Download PTVSHC3D4V5BL Datasheet




Prisemi PTVSHC3D4V5BL
ESD Protector
Electronics Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
CJ
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
PTVSHC3D4V5BL
I
IPP
VC VBRVRWM
IT
IR
IR
IT
V
VRWM VBR VC
IPP
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VC
VC
VC
Cj
Conditions
It =1mA
VRWM =4.35V
IPP=20A tP = 8/20μs
IPP=50A tP = 8/20μs
IPP=70A tP = 8/20μs
VR=0V f = 1MHz
Min.
4.5
Typ.
8.5
11
15
150
Max.
4.35
1
11
13
18
200
Units
V
V
μA
V
V
V
pF
Absolute maximum rating@25
Rating
Peak Pulse Power ( tP = 8/20μS )
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
Ppp
TL
TJ
TSTG
Value
1000
260 (10 sec)
-55 to +125
-55 to +150
Units
W
Rev.06.2
2
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Prisemi PTVSHC3D4V5BL
ESD Protector
Typical Characteristics
100
80
60
40
20
0
0
tf=8μs
tP =20μs(IPP /2)
5 10 15 20
t - Time -μs
Fig 1.Pulse Waveform
25 30
PTVSHC3D4V5BL
100
80
60
40
20
0
0
25 50
75 100 125
TL – Lead Temperature -
Fig 2.Power Derating Curve
150
19
Pulse waveform: tp=8/20us
15
10
5
0
0 20 40 60 80
IPP-Peak pulse current (A)
Fig 3. Clamping voltage vs. Peak pulse current
250
f=1MHz
200
150
100
50
0
01 2 34 5
VR-Reverse voltage (V)
Fig 4. Capacitance vs. Reveres voltage
10000
1000
100
10
1 10 100 1000
Pulse Duration(us)
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.2
3
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