Diode Arrays. SM05-02HTG Datasheet

SM05-02HTG Arrays. Datasheet pdf. Equivalent


Littelfuse SM05-02HTG
TVS Diode Array
General Purpose ESD Protection - SM05 through SM36
SM Series 400W TVS Diode Array
RoHS Pb GREEN
Description
The SM series TVS Diode Array is designed to protect
sensitive equipment from damage due to electrostatic
discharge (ESD), electrical fast transients (EFT), and
lightning induced surges.
The SM series can absorb repetitive ESD strikes above
the maximum level specified in IEC 61000-4-2 international
standard without performance degradation and safely
dissipate up to 24A of 8/20µs induced surge current (IEC-
61000-4-5) with very low clamping voltages.
Pinout and Functional Block Diagram
(AEC-Q101 qualified)
1
3
2
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Features
• ESD, IEC 61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 50A
(5/50ns)
• Lightning, IEC 61000-
4-5 2nd edition, 24A
(tP=8/20μs, SM05)
• Working voltages: 5V,
12V, 15V, 24V and 36V
• Low clamping voltage
• Low leakage current
• AEC-Q101 qualified
(SOT23-3 package)
• Moisture Sensitivity
Level(MSL -1)
Applications
• Industrial Equipment
• Test and Medical
Equipment
• Point-of-Sale Terminals
• Motor Controls
• Legacy Ports
(RS-232, RS-485)
• Security and Alarm
Systems
RS-232 Application Example
RS-232 Port
RD
TD
RTS
CTS
DSR
DTR
Transceiver
IC
Case GND
SM15 (x6)
(bidirectional implementation)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19


SM05-02HTG Datasheet
Recommendation SM05-02HTG Datasheet
Part SM05-02HTG
Description TVS Diode Arrays
Feature SM05-02HTG; TVS Diode Array General Purpose ESD Protection - SM05 through SM36 SM Series 400W TVS Diode Array .
Manufacture Littelfuse
Datasheet
Download SM05-02HTG Datasheet




Littelfuse SM05-02HTG
TVS Diode Array
General Purpose ESD Protection - SM05 through SM36
Absolute Maximum Ratings
Symbol
PPk
TOP
TSTOR
Parameter
Peak Pulse Power (tp=8/20μs)
Operating Temperature
Storage Temperature
Value
400
-40 to 150
-55 to 150
Units
W
°C
°C
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
SM05 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Min Typ Max
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
Clamp Voltage1
VRWM
VR
ILEAK
VC
IR≤1μA
IR=1mA
VR=5V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
6.0
5.0
1.0
9.8
13.0
Dynamic Resistance2
Peak Pulse Current
(8/20µs)1
RDYN
Ipp
TLP, tp=100ns, I/O to GND
tp=8/20µs
0.19
24.0
ESD Withstand Voltage1
VESD
IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
±30
±30
Diode Capacitance1
CI/O-GND
CI/O-I/O
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
400
350
SM12 Electrical Characteristics (TOP=25ºC)
Parameter
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
Clamp Voltage1
Dynamic Resistance2
Peak Pulse Current
(8/20µs)1
ESD Withstand Voltage1
Diode Capacitance1
Symbol
VRWM
VR
ILEAK
VC
RDYN
Ipp
VESD
CI/O-GND
CI/O-I/O
Test Conditions
IR≤1μA
IR=1mA
VR=12V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
TLP, tp=100ns, I/O to GND
tp=8/20µs
IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
Min
13.3
±30
±30
Typ
0.25
Max
12.0
1.0
18.5
22.5
17.0
150
120
Units
V
V
μA
V
V
A
kV
kV
pF
pF
Units
V
V
μA
V
V
A
kV
kV
pF
pF
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19



Littelfuse SM05-02HTG
TVS Diode Array
General Purpose ESD Protection - SM05 through SM36
SM15 Electrical Characteristics (TOP=25ºC)
Parameter
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
Clamp Voltage1
Dynamic Resistance2
Peak Pulse Current
(8/20µs)1
ESD Withstand Voltage1
Symbol
VRWM
VR
ILEAK
VC
RDYN
Ipp
VESD
Test Conditions
IR≤1μA
IR=1mA
VR=15V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
TLP, tp=100ns, I/O to GND
tp=8/20µs
IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Diode Capacitance1
CI/O-GND
CI/O-I/O
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
SM24 Electrical Characteristics (TOP=25ºC)
Parameter
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
Symbol
VRWM
VR
ILEAK
Clamp Voltage1
VC
Dynamic Resistance2
Peak Pulse Current
(8/20µs)1
RDYN
Ipp
ESD Withstand Voltage1
VESD
Test Conditions
IR≤1μA
IR=1mA
VR=24V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
TLP, tp=100ns, I/O to GND
tp=8/20µs
IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Diode Capacitance1
CI/O-GND
CI/O-I/O
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
SM36 Electrical Characteristics (TOP=25ºC)
Parameter
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
Symbol
VRWM
VR
ILEAK
Clamp Voltage1
VC
Dynamic Resistance2
Peak Pulse Current
(8/20µs)1
RDYN
Ipp
Test Conditions
IR≤1μA
IR=1mA
VR=36V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
IPP=4A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
TLP, tp=100ns, I/O to GND
tp=8/20µs
ESD Withstand Voltage1
VESD
IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Diode Capacitance1
CI/O-GND
CI/O-I/O
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
Note:
1 Parameter is guaranteed by design and/or component characterization.
2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
Min
16.7
±30
±30
Min
26.7
±30
±30
Min
40.0
±30
±30
Typ Max
15.0
1.0
24.0
30.0
0.30
12.0
100
75
Units
V
V
μA
V
V
A
kV
kV
pF
pF
Typ Max Units
24.0 V
V
1.0 μA
36.0 V
42.0 V
0.50 Ω
7.0 A
kV
kV
65 pF
50 pF
Typ Max Units
36.0 V
V
1.0 μA
52.0 V
62.0 V
0.65 Ω
5.0 A
kV
kV
50 pF
40 pF
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19







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