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Protection Devices. UDT23A2.8L01 Datasheet |
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UDT23A2.8L01
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
The UDT23A2.8L01 of transient voltage suppressors are designed
to protect low voltage state-of-the-art CMOS semiconductors from
transients caused by electrostatic discharge(ESD), cable discharge
events (CDE), lightning and other induced voltage surges.
The device provides low stand off voltages with significant reductions
in leakage currents and capacitance over silicon avalanche diode
processes. It features integrated low capacitance compensation
diodes that reduce the typical capacitance 2.5pF per line.
This combined with low leakage current, means signal integrity
preserved in high-speed supplications such as 10/100 Ethernet.
Features
● IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
● SOT-23 surface mount package
● Protects one line
● Working voltage: 2.8V
● low capacitance
● Low leakage current
● Low operating and clamping voltages
● Solid-state silicon avalanche technology
● Lead Free/RoHS compliant
● Solder reflow temperature: Pure Tin-Sn, 260~270℃
● Flammability rating UL 94V-0
● Meets MSL level 1, per J-STD-020
● Marking: B SZ4
I/O
Pin Configuration
Applications
NC UDT23A2.8L01
● 10/100 Ethernet
● WAN/LAN Equipment
● High current switching systems
● Desktops, servers and notebook
● Instrumentation
● Analog inputs
● Base stations
● High-speed data line protection
I/O
NC
I/O
Unidirectional Protection
UDT23A2.8L01
NC
Bidirectional Protection
Revision：10-Jun-15
www.brightking.com
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Maximum Ratings
Rating
Peak pulse power (tp=8/20μs waveform)
ESD voltage (Contact discharge)
ESD voltage (Air discharge)
Storage & operating temperature range
Symbol
PPP
VESD
TSTG ,TJ
UDT23A2.8L01
Value
400
±8
±15
-55~+150
Unit
W
kV
℃
Electrical Characteristics (TJ=25℃)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Symbol
VRWM
VBR
IR
VC
VC
Off state junction capacitance
CJ
Condition
Min. Typ. Max. Unit
2.8 V
IBR=1mA
VR=2.8V
3
V
5 μA
IPP=2A
IPP=5A
5.5 V
8.5 V
0Vdc,f=1MHz
Between I/O
pins and GND
2.5 5 pF
Revision：10-Jun-15
www.brightking.com
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Typical Characteristics Curves
Figure 1. Power Derating Curve
Figure 3. Non-Repetitive Peak Pulse vs. Pulse Time
UDT23A2.8L01
Figure 2. Pulse Waveforms
110
100
90
80
70
60
50
40
30
20
10
0
0
tr Peak value Ipp Waveform
Parameters:
tr=8µs
td=20µs
td=t|IPP/2
5 10 15 20 25 30
t-Time (μs)
Figure 4. Capacitance vs. Reverse Voltage
Figure 5. Clamping Voltage vs. Peak Pulse Current
Revision：10-Jun-15
www.brightking.com
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