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Protection Devices. UDD32C03L01-HT Datasheet |
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UDD32C03L01-HT
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
The UDD32C03L01-HT is an ultra low capacitance TVS array designed to
potect the gigabit network hundred meters transport port .This series
has been specifically Designed to protect sensitive components
which are connected to data an transmission lines from overvoltage caused
by electrostatic discharge (ESD),cable discharge events (CDE) and lightning.
The unique design incorporates surge rated, low capacitance steering
diodes and a TVS diode in a single package. During transient conditions,
the steering diodes direct the transient current to ground. The internal
TVS diode clamps the transient voltage to a safe level. The ultra low
capacitance array configuration allows the user to protect up to the high
speed data lines. These devices are in a signal package, RoHS/WEEE
compliant, SOD-323 package. It measures 2.5×1.25×1.0mm.
The series devices may be used to meet the immunity requirements of
IEC61000-4-2 (ESD), IEC61000-4-4 (EFT) and IEC61000-4-5 (Surge).
Features
● Protect the gigabit network hundred meters transport port
● IEC61000-4-2 ESD 30KV Air, 30KV contact compliance
● SOD-323 surface mount package
● Protects one I/O line
● Peak power dissipation of 220W under 8/20μs waveform
● Working voltage: 3.3V
● Low leakage current
● Low operating and clamping voltages
● Solid-state silicon avalanche technology
● Lead Free/RoHS compliant
● Solder reflow temperature: Pure Tin-Sn, 260~270℃
● Flammability rating UL 94V-0
● Meets MSL level 1, per J-STD-020
● MARKING:AC
Pin Configuration
Applications
● USB 2.0 and USB 3.0 interface
● 10/100/1000 Ethernet
● Personal digital assistants (PDA)
● Serial ATA protection
● Digital visual interface (DVI)
● Wireless system devices
● Handhelds and notebooks
● Digital cameras
● RF interface
Revision：17-Aug -18
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Maximum Ratings
Rating
Peak pulse power (tp=8/20μs waveform)
ESD voltage (Contact discharge)
ESD voltage (Air discharge)
Lead soldering temperature
Storage & operating temperature range
UDD32C03L01-HT
Symbol
PPP
VESD
TL
TSTG ,TJ
Value
220
±30
±30
260
-55~+150
Unit
W
kV
℃
℃
Electrical Characteristics (TA=25℃)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Off state junction capacitance
Symbol
VRWM
VBR
IR
VC
CJ
Condition
Min. Typ. Max. Unit
3.3 V
IBR=1mA
VR=3.3V
IPP=15A
4V
1 μA
15 V
0Vdc,f=1MHz
0.8
pF
Typical Characteristics Curves
Figure 1. Power Derating Curve
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175 200
TA-Ambient Temperature (℃)
Figure 2. Pulse Waveform
Revision：17-Aug -18
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Figure 4. Clamping Voltage vs. Peak Pulse Current
UDD32C03L01-HT
Figure 4. ESD Clamping (8kV Contact IEC61000-4-2)
Recommended Soldering Conditions
Reflow Soldering
Revision：17-Aug -18
www.brightking.com
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