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Protection Devices. LES08C24L04 Datasheet |
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LES08CXXL04 SERIES
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
Brightking’s LES08CXXL04 series has been specifically designed
to protect sensitive components which are connected to data and
transmission lines from overvoltage caused by electrostatic discharge
(ESD), electrical fast transients (EFT), and lightning.
The low capacitance array configuration of the series allows the user
to protect four high-speed data or I/O lines. The high surge capability
makes the series suitable for telecommunication systems operating in
harsh transient environments.
The low inductance construction
minimizes voltage overshoot during high current surges.
Features
● IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
● SOIC-08 surface mount package
● Protects four I/O lines
● Peak power dissipation of 500W under 8/20μs waveform
● Working voltage: 5V, 12V, 15V and 24V
● Low leakage current
● Low capacitance and clamping voltage
● Solid-state silicon avalanche technology
● Lead Free/RoHS compliant
● Solder reflow temperature: Pure Tin-Sn, 260~270℃
● Flammability rating UL 94V-0
● Meets MSL level 1, per J-STD-020
Applications
● Multi-Mode transceiver protection
● WAN equipment
● CSU/DSU
● Multiplexers
● Routers
● RS-232 (V.28)
● RS-422 (V.11, X.21)
● Ethernet-10/100 base T
● Low-voltage ASICs
Pin Configuration
Revision：31-Jul-15
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Maximum Ratings
Rating
Peak pulse power (tp=8/20μs waveform)
ESD voltage (Contact discharge)
ESD voltage (Air discharge)
Storage & operating temperature range
Electrical Characteristics (TJ=25℃)
LES08C05L04 (Marking: B LC05C-4)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Symbol
VRWM
VBR
IR
VC
VC
Off state junction capacitance
CJ
LES08C12L04 (Marking: B LC12C-4)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Off state junction capacitance
Symbol
VRWM
VBR
IR
VC
VC
CJ
LES08C15L04 (Marking: B LC15C-4)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Off state junction capacitance
Symbol
VRWM
VBR
IR
VC
VC
CJ
Revision：31-Jul-15
LES08CXXL04 SERIES
Symbol
PPP
VESD
TSTG ,TJ
Value
500
±8
±15
-55~+150
Unit
W
kV
℃
Condition
Min. Typ. Max. Unit
5V
IBR=1mA
VR=5V
each I/O pin
6
V
10 μA
IPP=1A
IPP=10A
0Vdc,f=1MHz
Between I/O
pins and GND
9.8 V
17 V
15 pF
Condition
Min. Typ. Max. Unit
12 V
IBR=1mA
VR=12V
each I/O pin
13.4
V
1 μA
IPP=1A
IPP=10A
0Vdc,f=1MHz
Between I/O
pins and GND
19 V
25 V
15 pF
Condition
Min. Typ. Max. Unit
15 V
IBR=1mA
VR=15V
each I/O pin
16.7
V
1 μA
IPP=1A
IPP=10A
0Vdc,f=1MHz
Between I/O
pins and GND
24 V
30 V
15 pF
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Electrical Characteristics (TJ=25℃)
LES08C24L04 (Marking: B LC24C-4)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Symbol
VRWM
VBR
Reverse leakage current
IR
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
VC
VC
Off state junction capacitance
CJ
LES08CXXL04 SERIES
Condition
Min. Typ. Max. Unit
24 V
IBR=1mA
VR=24V
each I/O pin
26.7
V
1 μA
IPP=1A
IPP=10A
0Vdc,f=1MHz
Between I/O
pins and GND
43 V
49 V
15 pF
Typical Characteristics Curves
Figure 1. Power Derating Curve
Figure 2. Pulse Waveforms
110
100
90
80
70
60
50
40
30
20
10
0
0
tr Peak value Ipp Waveform
Parameters:
tr=8µs
td=20µs
td=t|IPP/2
5 10 15 20 25 30
t-Time (μs)
Figure 3. Non-Repetitive Peak Pulse vs. Pulse Time
Figure 4. Capacitance vs. Reverse Voltage
Revision：31-Jul-15
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