B18N20F

B18N20D/F N-Channel 200-V (D-S) MOSFET General Description B18N20D/F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features RDS(ON)=180mΩ@VGS=10V Improved dv/dt capability, high ruggedness Exceptional on-resistance and maximum DC current TO-252-3/TO-220F-3 Package Pin Configuration D G Applications LED backlight LCD monitor LCD TV DC/DC Converter Load Switch S GDS ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) ℃TA=25 Maximum Power Dissipation ℃TA=70 Operating Junction Temperature Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM IS PD TJ RθJC N-Channel 200 ±30 18 15 60 3 ...