Schottky Diode. IDH16G65C6 Datasheet

IDH16G65C6 Diode. Datasheet pdf. Equivalent

IDH16G65C6 Datasheet
Recommendation IDH16G65C6 Datasheet
Part IDH16G65C6
Description 650V SiC Schottky Diode
Feature IDH16G65C6; IDH16G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation 6 (G6) is the l.
Manufacture Infineon
Datasheet
Download IDH16G65C6 Datasheet




Infineon IDH16G65C6
IDH16G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier
diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further
advancements like a novel Schottky metal system. The result is a family of products with improved efficiency
over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™ Schottky diode 650 V G6
has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent
application requirements in this voltage range.
Table 1
Key performance parameters
Parameter
Value
Unit
VRRM 650 V
QC (VR = 400 V)
21.5
nC
EC (VR = 400 V)
4.3
µJ
IF (TC ≤ 135 °C, D = 1)
16
A
VF (IF = 16 A, Tj = 25 °C) 1.25
V
PG-TO220-2
CASE
1) Cathode
1 2) Anode
2
Table 2
Package information
Type / ordering Code Package
IDH16G65C6
PG-TO220-2
Marking
D1665C6
Features
Best in class forward voltage (1.25 V)
Best in class figure of merit (Qc x VF)
High dv/dt ruggedness (150 V/ns)
Benefits
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density
Potential Applications
Power factor correction in SMPS
Solar inverter
Uninterruptible power supply
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)
Final Datasheet
Please read the Important Notice and Warnings at the end of this document
Rev. 2.0, 2017-05-23



Infineon IDH16G65C6
6th Generation CoolSiCTM
IDH16G65C6
Table of Content
1 Maximum ratings ...............................................................................................................................3
2 Thermal characteristics .....................................................................................................................3
3 Electrical characteristics ....................................................................................................................4
3.1 Static characteristics...............................................................................................................................4
3.2 AC characteristics ....................................................................................................................................4
4 Diagrams............................................................................................................................................5
5 Simplified forward characteristic.......................................................................................................7
6 Package outlines................................................................................................................................8
Final Datasheet
2 Rev. 2.0, 2017-05-23



Infineon IDH16G65C6
6th Generation CoolSiCTM
IDH16G65C6
1 Maximum ratings
Table 3
Maximum ratings
Parameter
Continuous forward current
Surge-repetitive forward current,
sine halfwave1
Surge non-repetitive forward
current, sine halfwave
Non-repetitive peak forward
current
i²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage
temperature
Mounting torque
Symbol
IF
IF,RM
IF,SM
IF,max
i²dt
VRRM
dv/dt
Ptot
Tj
Tstg
Min.
-55
Values
Typ. Max.
16
18
34
70
82
65
710
33
21
650
150
97
175
70
Unit Note/Test condition
TC 135 °C, D = 1
TC 125 °C, D = 1
TC ≤ 25 °C, D = 1
A TC = 25 °C, tp = 10 ms
TC = 25 °C, tp = 10 ms
TC = 150 °C, tp = 10 ms
TC = 25 °C, tp = 10 µs
A²s
V
V/ns
W
TC = 25 °C, tp = 10 ms
TC = 150 °C, tp = 10 ms
TC = 25 °C
VR = 0..480 V
TC = 25°C, RthJC,max
°C
Ncm M3 screw
2 Thermal characteristics
Table 4
Thermal characteristics (PG-TO-220-2)
Parameter
Thermal resistance, junction-
case
Thermal resistance, junction-
ambient
Soldering temperature,
wavesoldering only allowed at
leads
Symbol Min.
RthJC
RthJA
Tsold
Values
Typ. Max.
0.9 1.6
62
260
Unit Note/Test condition
K/W
leaded
°C
1.6 mm (0.063 in.) from
case for 10 s
1 The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period).
Final Datasheet
3 Rev. 2.0, 2017-05-23







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)