TVS Diode. ST0541S3 Datasheet

ST0541S3 Diode. Datasheet pdf. Equivalent

ST0541S3 Datasheet
Recommendation ST0541S3 Datasheet
Part ST0541S3
Description 1-Line Low Capacitance Bi-directional TVS Diode
Feature ST0541S3; ST0541S3 1-Line Low Capacitance Bi-directional TVS Diode Description Mechanical Characteristics T.
Manufacture Sursemi
Datasheet
Download ST0541S3 Datasheet




Sursemi ST0541S3
ST0541S3
1-Line Low Capacitance Bi-directional TVS Diode
Description
Mechanical Characteristics
The ST0541S3 is a 5V bi-directional TVS diode, utilizing
leading monolithic silicon technology to provide fast re-
sponse time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive
high-speed data lines. The ST0541S3 has a low capaci-
tance with a typical value at 1pF, and complies with the
IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV
contact discharge. It is assembled into a lead-free SOD-
323 package. The small size, low capacitance and high
ESD surge protection make ST0541S3 an ideal choice to
protect cell phone, wireless systems, and communication
equipment.
Package: SOD-323
Lead Finish: Matte Tin
Case Material: “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
Features
Applications
450W peak pulse power (8/20μs)
Ultra low capacitance: 1pF typical
Ultra low leakage: nA level
Low operating voltage: 5V
Low clamping voltage
Protects one power line or data line
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
– IEC61000-4-5 (Lightning) 18A (8/20μs)
RoHS Compliant
USB Ports
Smart Phones
Wireless Systems
Ethernet 10/100/1000 Base T
Ordering Information
Part Number
Packaging
ST0541S3 3000/Tape & Reel
Reel Size
7 inch
Schematic and PIN Configuration
1
2
Circuit and Pin Schematic
Rev. 7_Jan, 2014
1 of 4
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Sursemi ST0541S3
Absolute Maximum Ratings (TA=25˚C unless otherwise specified)
Parameter
Peak Pulse Power (8/20µs)
Peak Pulse Current (8/20µs)
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
Ppk
IPP
VESD
TJ
Tstg
Value
450
18
±30
±30
−40 to +85
−55 to +150
ST0541S3
Unit
W
A
kV
°C
°C
Electrical Characteristics (TA=25˚C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit Test Condition
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
VRW M
VBR
IR
VC
6
5V
7 V IT = 1mA
0.5 uA VRWM = 5V
12 V IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
25 V IPP = 18A (8 x 20µs pulse)
Junction Capacitance
CJ
1
pF VR = 0V, f = 1MHz
Rev. 7_Jan, 2014
2 of 4
www.sursemi.com



Sursemi ST0541S3
ST0541S3
Typical Performance Characteristics (TA=25˚C unless otherwise specified)
5.00
4.00
3.00
2.00
1.00
0.00
0123456
Peak Pulse Current_Ipp (A)
Junction Capacitance vs. Reverse Voltage
50.00
40.00
30.00
20.00
10.00
0.00
0 4 8 12 16 20
Peak Pulse Current_Ipp (A)
Clamping Voltage vs. Peak Pulse Current
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60
Time_t(uS)
8 X 20uS Pulse Waveform
80
10
1
0.1
0.01
0.1 1 10 100
Pulse Duration_tp(uS)
Peak Pulse Power vs. Pulse Time
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient Temperature_Ta()
Power Derating Curve
ESD Clamping Voltage
8 kV Contact per IEC61000−4−2
Rev. 7_Jan, 2014
3 of 4
www.sursemi.com







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