TVS Diode. ST1251D4 Datasheet

ST1251D4 Diode. Datasheet pdf. Equivalent

ST1251D4 Datasheet
Recommendation ST1251D4 Datasheet
Part ST1251D4
Description 1-Line Uni-directional TVS Diode
Feature ST1251D4; ST1251D4 1-Line Uni-directional TVS Diode DDeessccrriippttiioonn Mechanical Characteristics The S.
Manufacture Sursemi
Datasheet
Download ST1251D4 Datasheet




Sursemi ST1251D4
ST1251D4
1-Line Uni-directional TVS Diode
DDeessccrriippttiioonn
Mechanical Characteristics
The ST1251D4 is a 12V uni-directional TVS diode, utiliz-
ing leading monolithic silicon technology to provide fast
response time and low ESD clamping voltage, making
this device an ideal solution for protecting voltage sensi-
tive data and power line. The ST1251D4 complies with
the IEC 61000-4-2 (ESD) standard with ±15 kV air and ±8
kV contact discharge. It is assembled into an ultra-small
1.0x0.6x0.5mm lead-free DFN package. The small size
and high ESD surge protection make ST1251D4 an ideal
choice to protect cell phone, digital cameras, audio play-
ers and many other portable applications.
Package: DFN1006-2 (1.0×0.6×0.5mm)
Lead Finish: NiPdAu
Case Material: “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
Features
Ultra small package: 1.0x0.6x0.5mm
Protects one data or power line
Ultra low leakage: nA level
Working voltage: 12V
Low clamping voltage
2-Pin leadless package
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
– IEC61000-4-5 (Lightning) 12A (8/20μs)
RoHS Compliant
Applications
Cellular Handsets and Accessories
Personal Digital Assistants
Notebooks and Handhelds
Portable Instrumentation
Digital Cameras
Peripherals
Audio Players
Dimensions and Pin Configuration
1.0
0.6 -
1
Ordering Information
Part Number
Packaging
ST1251D4 10000/Tape & Reel
Reel Size
7 inch
0.5 2
Package Dimensions
Circuit and Pin Schematic
Rev. 7_Jan, 2014
1 of 4
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Sursemi ST1251D4
ST1251D4
Absolute Maximum Ratings (TA=25˚C unless otherwisespecified)
Parameter
Peak Pulse Power (8/20µs)
Peak Pulse Current (8/20µs)
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
Ppk
Ipp
VESD
TJ
Tstg
Value
300
12
±30
±30
−55 to +125
−55 to +150
Unit
W
A
kV
°C
°C
EElelcetcrtirciaclalCChharaaractcetreirsitsitciscs(T(TAA==252˚5C˚Cuunnlelsesssotohtherewrwisisee ssppeecciiffiieedd))
Parameter
Symbol Min Typ Max Unit Test Condition
Reverse Working Voltage
VRW M
12 V Pin 1 to Pin 2
Breakdown Voltage
VBR 13.3
V IT = 1mA, Pin 1 to Pin 2
Reverse Leakage Current
IR
100 nA VRWM = 12V, Pin 1 to Pin 2
Forward Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
VF
VC
VC
CJ
1.0 1.2
V IF = 10mA, Pin 2 to Pin 1
15
V
IPP = 1A (8 x 20µs pulse), Pin 1 to
Pin 2
25
V
IPP = 12A (8 x 20µs pulse), Pin 1
to Pin 2
60 pF VR = 0V, f = 1MHz
Rev. 7_Jan, 2014
2 of 4
www.sursemi.com



Sursemi ST1251D4
ST1251D4
Typical Performance Characteristics (TA=25˚C unless otherwise specified)
60
50
40
30
20
10
0
0 2 4 6 8 10 12
Reverse Voltage_VR(V)
Junction Capacitance vs. Reverse Voltage
25
22
19
16
13
10
0
2 4 6 8 10
Peak Pulse Current_Ipp (A)
12
Clamping Voltage vs. Peak Pulse Current
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60
Time_t(uS)
80
8 X 20uS Pulse Waveform
10
1
0.1
0.01
0.1 1 10 100 1000
Pulse Duration_tp(uS)
Peak Pulse Power vs. Pulse Time
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient Temperature_Ta()
Power Derating Curve
ESD Clamping Voltage
8 kV Contact per IEC61000−4−2
Rev. 7_Jan, 2014
3 of 4
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