ESD. ESD8V0R1B-02LRH Datasheet

ESD8V0R1B-02LRH ESD. Datasheet pdf. Equivalent

ESD8V0R1B-02LRH Datasheet
Recommendation ESD8V0R1B-02LRH Datasheet
Part ESD8V0R1B-02LRH
Description ESD
Feature ESD8V0R1B-02LRH; ESD8V0R1B-02LRH Product for Use Only as Protection against Electrostatic Discharge (ESD). * This pr.
Manufacture msksemi
Datasheet
Download ESD8V0R1B-02LRH Datasheet




msksemi ESD8V0R1B-02LRH
ESD8V0R1B-02LRH
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
Unit: mm
0.6±0.05
A
2terminal ultra small package suitable for mounting on small space.
Absolute Maximum Ratings (Ta = 25°C)
0.2
0.07M A ±0.05
0.1±0.05
Characteristic
Power dissipation
Symbol
P
Rating
150*
Unit
mW
0.48+-00..0032
Junction temperature
Tj 150 C
Storage temperature range
Tstg
−55~150
C
fSC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the JEDEC
reliability significantly even if the operating conditions (i.e. operating JEITA
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.0006 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.
Pad Dimension(Reference)Unit : mm
0.85
0.26
0.21
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5mA
IZ = 5mA
VR = 6.5V
VR 0 V, f 1 MHz
Min Typ. Max Unit
7.7 8.2 8.7
V
― ― 30 Ω
― ― 0.5 μA
― 20 ― pF



msksemi ESD8V0R1B-02LRH
Guaranteed Level of Esd Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±30kV
Criterion: No damage to device elements
100
Ta=25°C
10
IZ - VZ
1
00.1
0.001
0.0001
2 3 4 5 6 7 8 9 10 11 12
ZENER VOLTAGE VZ (V)
ESD8V0R1B-02LRH
Equivalent Circuit (Top View )
CT - VR
100
f=1MHz
Ta=25°C
10
1
01234567
REVERSE VOLTAGE VR(V)







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