Voltage Suppressor. MSESD3V3C Datasheet

MSESD3V3C Suppressor. Datasheet pdf. Equivalent

MSESD3V3C Datasheet
Recommendation MSESD3V3C Datasheet
Part MSESD3V3C
Description Transient Voltage Suppressor
Feature MSESD3V3C; MSESD3V3C Transient Voltage Suppressor Micro-Packaged Diode for ESD Protection The MSESD3V3C Serie.
Manufacture msksemi
Datasheet
Download MSESD3V3C Datasheet




msksemi MSESD3V3C
MSESD3V3C
Transient Voltage Suppressor
Micro-Packaged Diode for ESD Protection
The MSESD3V3C Series is designed to protect voltage
sensitive components from damage or latch-up due to ESD.
Excellent clamping capability, low leakage, and fast response
time provide best in class protection on designs that are
exposed to ESD for board level. Because of its small size and
bi-directional design, it is ideal for use in cellular phones, MP3
players, and portable applications that require audio line
protection.
1
DFN 10 06 -2L
Specification Features
Small Body Outline Dimensions:
nom 0.039″ x 0.024″ (1.0x0.6 mm)
Low Body Height: nom 0.019″ (0.5 mm)
Low Capacitance 12 pF
Low Clamping Voltage
Reverse Working (Stand-off) Voltage: 3.3 V
Low Leak age
Response Time is Typically < 1 ns
IEC61000-4-2 Level 4 ESD Prot ection
This is a Pb-Free Device
Mechanical Characteristi cs:
CASE: Void-free, trans fer-molded, thermosetting plastic Epoxy Meets UL 94 V−0
LEAD FINISH: NiP dAu
MOUNTING POSITION: Any
QUALIFIED MA X REFLOW TEMPERA TURE: 260°C
Device Meets MSL 1 Requirements
RoHS/WEEE Compliant
Marking: Marking code
Applica tion s
Cellular Handsets & Accessories
Personal Digital Assistants (PDAs)
Notebooks & Handhelds
Portable Instrumentation
Digital Cameras
Peripherals
MP3 Players
2



msksemi MSESD3V3C
MSESD3V3C
Maximum Ratings
Rating
IEC 61000-4-2 (ESD)
Contact
Peak Power Per 8 x 20µs Waveform
Total Power Dissipation on FR-5Board
@ TA = 25°C
Symbol
PPK
PD
Value
±30
100
300
Unit
kV
W
mW
Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Lead Solder Temperature - Maximum
(10 Second Duration)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation
above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating
Conditions may affect device reliability.
Note1: FR-5 =1.0*0.75*0.062inch (25.4*19.05*1.58mm).
ELECTRI CAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Symbol
IPP
VC
VRWM
IR
IT
VBR
PPK
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Volt age
Maximum Reverse Leakage Current @ VRWM
Test Current
Breakdown Voltage @ IT
Peak Power Dissipation
Max. Capacitance @ VR = 0 and freq.=1 MHz
Device
Mark
VRWM
(V)
IR ( µA) @ VRWM
Typ. Max.
VBR (V) @ IT
Min. Typ. Max.
MSESD3V3C B 3.3 0.05 1 6.5 6.8/7.6 8
Note2: Surge current wave form per figure 3.
IT Max. VC (V)
(mA) @ IPP=1A
1 9.8
C
(pF)
12



msksemi MSESD3V3C
MSESD3V3C
TYPICAL CHARACTERISTICS
7.1
7.0
6.9
6.8
6.7
6.6
6.5
6.4
6.3
6.2
6.1
-55
25
Temperature (°C)
150
Figure 1: Typical Breakdown Voltage versus
Temperature
110
100
90
80
70
60
50
40
30
20
10
-55
25
Temperature (°C)
150
Figure 2: Typical Leakage Current versus
Temperature
100
90 tR
Peak Value IRSM @ 8µs
80
70 e-t
60
50 tP
40
Half Value IRSM /2 @ 20µs
30
20
10
0
0
10 20 30 40 50 60 70 80
Time (µs)
Figure 3: 8/20µs Pulse Wave Form







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