ESD protector. TVS5V6SOD-323 Datasheet

TVS5V6SOD-323 protector. Datasheet pdf. Equivalent

TVS5V6SOD-323 Datasheet
Recommendation TVS5V6SOD-323 Datasheet
Part TVS5V6SOD-323
Description ESD protector
Feature TVS5V6SOD-323; TVS5V6 SOD-323 Description The TVS5V6 SOD-323 ESD protector is designed to replace multilayer varis.
Manufacture msksemi
Datasheet
Download TVS5V6SOD-323 Datasheet




msksemi TVS5V6SOD-323
TVS5V6 SOD-323
Description
The TVS5V6 SOD-323 ESD protector is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They feature
large cross-sectional area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when compared to
MLVs. The SXTVS3D5VC protects sensitive semiconductor components from damage or
upset due to electrostatic discharge (ESD) and other voltage induced transient events. The
SXTVS3D5VC is available in a SOD-323 package with working voltages of 5 volt. It is
used to meet the ESD immunity requirements of IEC 61000-4-2, (±30kV air, ±30kV contact
discharge)
2
1
Feature
Applications
2000W Peak pulse power per line (tP = 8/20μs)
SOD-323 package
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping Voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Cell phone handsets and accessories
Personal digital assistants (PDA’s)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
1



msksemi TVS5V6SOD-323
Electronics Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
CJ
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
TVS5V6 SOD-323
VC VBR VRWM
IPP I
IT
IR
IR
VRWM VBR VCIT
V
IPP
Electrical characteristics per line@25( unless otherwisespecified)
Parameter
Symbol
Conditions
Min. Typ. Max. Units
Reverse Working Voltage(1)
VRWM
5.0 V
Breakdown Voltage
VBR
It =1mA
5.1
V
Reverse Leakage Current
IR
VRWM =5.0V
1 μA
Clamping Voltage(PIN2~PIN1)
VC
IPP=20A tP = 8/20μs
6.5 8
V
Clamping Voltage(PIN2~PIN1)
VC
IPP=45A tP = 8/20μs
7.5 9
V
Clamping Voltage(PIN2~PIN1)
VC
IPP=90A tP = 8/20μs
9.5 12
V
Clamping Voltage(PIN2~PIN1)
VC
IPP=130A tP = 8/20μs
11.5 15
V
Junction Capacitance
Cj VR=0V f = 1MHz
320 400
pF
Note 1: VRWM is the maximum reverse working voltage, or reverse stand-off voltage. ESD can protect signal line properly within its
rated voltage. If the signal line's voltage is over VRWM, ESD will change to other state.
Absolute maximum rating@25
Rating
Peak Pulse Power ( tP = 8/20μS )
Total Device Dissipation FR-5 Board
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
Ppp
PD
TL
TJ
TSTG
2
Value
2000
500
260 (10 sec)
-55 to +125
-55 to +150
Units
W
mW



msksemi TVS5V6SOD-323
TVS5V6 SOD-323
Typical Characteristics
100
80
60
40
20
0
0
tf=8μs
tP =20μs( IPP /2)
5 10 15 20
t - Time -μs
Fig 1.Pulse Waveform
25 30
100
80
60
40
20
0
0
25 50
75 100 125
TL – Lead Temperature -
Fig 2.Power Derating Curve
150
14
12 Pulse waveform: tp=8/20us
8
4
0
0 50 100 150 200
IPP-Peak pulse current (A)
Fig 3. Clamping voltage vs. Peak pulse current
350
250
250
200
150
100
50
0
0
f=1MHz
1234
VR-Reverse voltage (V)
5
Fig 4. Capacitance vs. Reveres voltage
6
10000
1000
100
10
1 10 100 1000
Pulse Duration(us)
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
3







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