ESD. MSESD5VC23 Datasheet

MSESD5VC23 ESD. Datasheet pdf. Equivalent


msksemi MSESD5VC23
MSESD5VC23 0201
1 Product Overview
1.1 Features
• ESD / transient protection of high speed data lines according to:
IEC61000-4-2 (ESD): ±16 kV (air/contact discharge)
IEC61000-4-4 (EFT): ±2kV / ±40 A (5/50 ns)
IEC61000-4-5 (surge): ±3 A (8/20 µs)
• Bi-directional working voltage up to: VRWM = ±5.5 V
• Line capacitance: CL =7pF (typical) at f = 1 MHz
• Clamping voltage: VCL = 13 V (typical) at ITLP = 16 A with RDYN = 0.22 Ω (typical)
• Very low reverse current: IR < 1 nA (typical)
• Minimized clamping overshoot due to extremely low parasitic inductance
• Small form factor SMD Size 0201 and low profile (0.58 mm x 0.28 mm x 0.15 mm)
• Bidirectional and symmetric I/V characteristics for optimized design and assembly
• Pb-free (RoHS compliant) and halogen free package
Guidelines for optimized PCB design and assembly process available [2]
1.2 Application Examples
• ESD Protection of highly susceptible IC/ASICs in audio, headset, human digital interfaces
• Dedicated solution to boost space saving and high performance in miniaturized modern electronics
1.3 Product Description
a) Pin configuration top view
b) Schematicdiagram
Figure 1-1 Pin Configuration and Schematic Diagram
Configuration _Schematic_Diagram.vst.vsd
Table 1-1 Part Information
Type
Package
Configuration
MSESD5VC23
WLL-2-1
1 line, bi-directional
1) The device does not have any marking or date code on the device backside. The Marking code is on pad side.
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MSESD5VC23 Datasheet
Recommendation MSESD5VC23 Datasheet
Part MSESD5VC23
Description ESD
Feature MSESD5VC23; MSESD5VC23 0201 1 Product Overview 1.1 Features • ESD / transient protection of high speed data line.
Manufacture msksemi
Datasheet
Download MSESD5VC23 Datasheet




msksemi MSESD5VC23
MSESD5VC23 0201
2 Maximum Ratings
Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified 1)
Parameter
Symbol
Values
Reverse working voltage
ESD (air / contact) discharge2)
Peak pulse power3)
Peak pulse current3)
Operating temperature range
Storage temperature
VRWM
VESD
PPK
IPP
TOP
Tstg
±5.5
±16
56
±3
-55 to 125
-65 to 150
1) Device is electrically symmetrical
2) VESD according to IEC61000-4-2 (R = 330 Ω, C = 150 pF discharge network)
3) Stress pulse: 8/20s current waveform according to IEC61000-4-5
Unit
V
kV
W
A
°C
°C
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability. Maximum
ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the
integrated circuit.
3 Electrical Characteristics
VF ...
Forward voltage
IF ... Forward current
VR ... Reverse voltage IR ...
Reverse current
VCL
VTLP VBR VRWM
VR
AV
AI RDYN
AV
IF
I PP
I TLP
IT
IR
IR
IT
Figure 3-1 Definitions of electrical characteristics
I PP
I TLP
IR
RDYN
AV
AI
AI
AV
VRWMVBR VCL
VTLP
VF
RDYN ... Dynamic resistance
VRWM ... Reverse working voltage max.
VBR ... Breakdown voltage
VCL ... Clamping voltage
VTLP ... TLP voltage
IR ... Reverse leakage currentIPP
... Peak pulse current
ITLP ... TLP current IT
... Test current
Diode_Characteristic_Curve_Bi-directional.svg
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msksemi MSESD5VC23
MSESD5VC23 0201
Table 3-1 DC Characteristics at TA = 25 °C, unless otherwise specified 1)
Parameter
Symbol
Values
Breakdown voltage
Min.
VBR 6.05
Typ.
8
Max.
Reverse current
IR
100
1) Device is electrically symmetrical
Unit Note / Test Condition
V IT = 1 mA
nA VR = 5.5 V
Table 3-2 RF Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Line capacitance
CL _
_
7 11
11
Unit
Note / Test Condition
pF VR = 0 V, f = 1 MHz
pF VR = 0 V, f = 1 GHz
Table 3-3 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified1)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Clamping voltage2)
VCL -
-
10.5 V ITLP = 1 A, tp = 100 ns
- - 15
ITLP = 16 A, tp = 100 ns
Clamping voltage3)
- - 11.3
IPP = 1 A, tp = 8/20 µs
Dynamic resistance2)
RDYN
-
-
- 14
0.22 -
IPP = 3 A, tp = 8/20 µs
tp = 100 ns
1) Device is electrically symmetrical
2) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω tp = 100ns, tr = 0.6 ns.
3) Stress pulse: 8/20s current waveform according to IEC61000-4-5
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