Barrier Diode. USCD032H Datasheet

USCD032H Diode. Datasheet pdf. Equivalent

USCD032H Datasheet
Recommendation USCD032H Datasheet
Part USCD032H
Description Schottky Barrier Diode
Feature USCD032H; USCD032H THRU USCD034H FEATURES * Halogen-free type * Lead free product , compliance to RoHs * Lead .
Manufacture msksemi
Datasheet
Download USCD032H Datasheet




msksemi USCD032H
USCD032H THRU USCD034H
FEATURES
* Halogen-free type
* Lead free product , compliance to RoHs
* Lead less chip form , no lead damage
* Lead-free solder joint , no wire bond & lead frame
* Low power loss , High efficiency
* High current capability , low VF
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
APPLICATION
* Switching mode power supply applications
* Portable equipment battery applications
* High frequency rectification
* DC / DC Converter
* Telecommunication
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.003 gram
OUTLINE DIMENSIONS
Case : 0603
1.6 ± 0.1
Unit : mm
0.05
R 0.20
0.35 ± 0.05
0.35 ± 0.05
Equivalent : SOD-523
MARKING
Cathode mark
4D
PACKING
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 5 reels per box
* 6 boxes per carton
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Junction temperature
Operating temperature range
Storage temperature range
Electrical characteristics (Ta = 25 oC)
ITEM
Forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Symbol
Conditions
VRRM
IF(AV)
IFSM
Tj
Topr
TSTG
8.3ms single half sine-wave
Symbol
Conditions
IF = 100mA
VF IF = 200mA
IF = 300mA
IRRM
VR = @ 10V , Ta = 25 oC
VR = Max. VRRM , Ta = 25 oC
Cj VR = 4V, f = 1.0 MHz
Rth(JA) Junction to ambient
Rth(JL) Junction to lead
Rating
USCD032H
USCD034H
20 40
300
2.0
125
-40 to +125
-40 to +125
Unit
V
mA
A
oC
Min.
-
-
-
-
-
-
-
-
Typ.
0.38
0.43
0.47
1
8
35
160
110
Max.
-
-
0.50
Unit
V
20 uA
50 uA
- pF
- oC/W
- oC/W



msksemi USCD032H
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
0.4
0.3
0.2
0.1
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
2.5
8.3ms Single Half Sine-Wave
(JEDEC Method)
2.0
1.5
1.0
0.5
0
0
1000
25 50 75 100
LEAD TEMPERATURE, (oC)
125
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
150
100
10
o
1 Ta=25 C
0
1
1000
100
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
TJ=100oC
10
TJ=25oC
1.0
0.10
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
FORWARD VOLTAGE, (V)
0.01
0 10 20 30 40
PERCENT OF RATED PEAK REVERSE VOLTAGE VR (V)
1000
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
100
10
1
0 5 10 15 20
REVERSE VOLTAGE, (V)







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