MLV. PESD12VS1UJ Datasheet

PESD12VS1UJ MLV. Datasheet pdf. Equivalent

PESD12VS1UJ Datasheet
Recommendation PESD12VS1UJ Datasheet
Part PESD12VS1UJ
Description MLV
Feature PESD12VS1UJ; PESD12VS1UJ Description Mechanical Characteristics The PESD12VS1UJ is designed to replace multila.
Manufacture msksemi
Datasheet
Download PESD12VS1UJ Datasheet




msksemi PESD12VS1UJ
PESD12VS1UJ
Description
Mechanical Characteristics
The PESD12VS1UJ is designed to replace multilayer varistors
(MLVs) in portable applications such as cell phones,
notebook computers and PDA’s, using monolithic silicon
technology to provide fast response time and ultra low
ESD clamping voltage, making this device an ideal solu-
tion for protecting sensitive semiconductor components
from damage. The 12VS1UJ complies with the IEC 61000-
4-2 (ESD) standard with ±15kV air and ±8kV contact dis-
Package: SOD-323
Lead Finish: Matte Tin
Case Material: “Threen” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
charge. The 12VS1UJ is assembled into a lead-free SOD-
323 package and will protect one unidirectional line.
These devices will fit on the same PCB pad area as an
0805 MLV device.
Features
500W peak pulse power (8/20µs)
Protects one data or power line
Ultra low leakage: nA level
Operating voltage: 12 V
Applications
Cellular Handsets and Accessories
Personal Digital Assistants
Notebooks and Handhelds
Portable Instrumentation
Peripherals
Pagers Peripherals
Desktop and Servers
Ultra low clamping voltage
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity testAir
discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
RoHS Compliant
Dimensions and Pin Configuration
SOD-323



msksemi PESD12VS1UJ
PESD12VS1UJ
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Peak Pulse Power (8/20µs)
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
Ppk
VESD
TJ
Tstg
Value
350
±30
±30
−55 to +125
−55 to +150
Unit
W
kV
°C
°C
Parameter
Symbol Min Typ Max Unit Test Condition
Reverse Working Voltage
VRWM
12 V
Breakdown Voltage
VBR 13.3
V IT = 1mA
Reverse Leakage Current
IR
0.5 µA VRWM = 12V
Forward Voltage
VF
0.8 1.2
V IF = 10mA
Clamping Voltage
VC
19 V IPP = 5A (8 x 20µs pulse)
Clamping Voltage
Peak Pulse Current
Junction Capacitance
VC
Ipp
CJ
13.5
V IPP = 15A (8 x 20us pulse)
15 A tp = 8/20µs
120 pF VR = 0V, f = 1MHz



msksemi PESD12VS1UJ
PESD12VS1UJ
Typical Performance Characteristics (TA=25°C unless otherwise Specified)
10 120
100
1 80
60
0.1 40
20
0.01
0.1
1 10 100
Pulse Duration_tp(uS)
1000
0
0 25 50 75 100 125 150
Ambient Temperature_Ta()
Peak Pulse Power vs. Pulse Time
Power Derating Curve
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60
Time_t(uS)
80
8 X 20uS Pulse Waveform







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)