Protection Devices. XESD32D24C Datasheet

XESD32D24C Devices. Datasheet pdf. Equivalent

XESD32D24C Datasheet
Recommendation XESD32D24C Datasheet
Part XESD32D24C
Description Electrostatic Discharged Protection Devices
Feature XESD32D24C; X ESD32D24C Electrostatic Discharged Protection Devices (ESD) Data Sheet Description Brightking’s X.
Manufacture msksemi
Datasheet
Download XESD32D24C Datasheet




msksemi XESD32D24C
X ESD32D24C
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
Brightking’s XESD32D24C is desi gned to protect voltage sensitive
components from ESD and transient voltage events. Excellent clamping
capability, low leakage, and fast response time, make these parts
ideal for ESD protection on designs where board space is at a premium.
Because of its small size, it is suited for use in cellular phones, portable
devices, digital cameras, power supplies and many other portable
applications.
It is designed to protect sensitive semiconductor components from
damage or upset due to electrostatic discharge(ESD), electrical fast
transients(EFT), and cable discharge events(CDE).
Features
IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
SOD-323 surface mount package
Protects bi-directional line
Peak power dissipation of 320W under 8/20μs waveform
Working voltage: 24V
Low leakage current
Low clamping voltage
Solid-state silicon avalanche technology
Lead Free/RoHS compliant
Solder reflow temperature: Pure Tin-Sn, 260~270
Flammability rating UL 94V-0
Meets MSL level 1, per J-STD-020
Marking: M
Pin Configuration
Applications
Cellular handsets & Accessories
Cordless phones
Personal digital assistants (PDAs)
Notebooks & Handhelds
Portable instrumentation
Digital cameras
Peripherals
MP3 players
Maximum Ratings
Rating
Peak pulse power (tp=8/20μs waveform)
ESD voltage (Contact discharge)
ESD voltage (Air discharge)
Storage & operating temperature range
Revision
Symbol
PPP
VESD
TSTG ,TJ
Value
320
±8
±15
-55~+150
Unit
W
kV



msksemi XESD32D24C
X ESD32D24C
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Off state junction capacitance
Symbol
VRWM
VBR
IR
VC
CJ
Condition
Min. Typ. Max. Unit
24 V
IBR=1mA
26.7
V
VR=24V
1 μA
IPP=1A
43 V
0Vdc,f=1MHz
37
pF
Typical Characteristics Curves
Figure 1. Power Derating Curve
Figure 3. Capacitance vs. Reverse Voltage
Figure 2. Pulse Waveform
110
100
90
80
70
60
50
40
30
20
10
0
0
tr Peak value Ipp Waveform
Parameters:
tr=8µs
td=20µs
td=t|PP/2
5 10 15 20 25 30
t-Time (μs)
Revision



msksemi XESD32D24C
Reflow Soldering
X ESD32D24C
Recommended Condition
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
-Temperature Min (TS min)
-Temperature Max (TS max)
-Time (min to max) (ts)
TS max to TL
-Ramp-up Rate
Time maintained above:
-Temperature (TL)
-Time (tL)
Peak Temperature (TP)
Time within 5of actual Peak Temperature (tP)
Ramp-down Rate
Time 25to Peak Temperature
Pb-Free Assembly
3/second max.
150
200
60-180 seconds
3/second max.
217
60-150 seconds
260
20-40 seconds
6/second max.
8 minutes max.
Revision







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