ESD Protector. ESD9N5BU Datasheet

ESD9N5BU Protector. Datasheet pdf. Equivalent


msksemi ESD9N5BU
Description
The ESD9N5BU protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced
transient events. They feature large cross-sectional area junctions for conducting
high transient currents, offer desirable electrical characteristics for board level
protection, such as fast response time, low operating voltage. It gives designer
the flexibility to protect one bi-directional line in applications where arrays are not
practical.
Feature
¾ 80W peak pulse power per line (tP = 8/20μs)
¾ DFN1006-2L package
¾ Replacement for MLV(0402)
¾ Bidirectional configurations
¾ Response time is typically < 1ns
¾ Low clamping voltage
¾ RoHS compliant
¾ Transient protection for data lines to
IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
Mechanical Characteristics
¾ Lead finish:100% matte Sn(Tin)
¾ Mounting position: Any
¾ Qualified max reflow temperature:260
¾ Device meets MSL 1 requirements
¾ Pure tin plating: 7 ~ 17 um
¾ Pin flatness:3mil
Electronics Parameter
Applications
¾ Cellular phones
¾ Portable devices
¾ Digital cameras
¾ Power supplies
ESD9N5BU
ESD Protector
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
CJ
IF
VF
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ IF
Rev.05.3
1
I
IPP
VC VBR VRWM
IIRT
IR
IT
V
VRWM VBR VC
IPP


ESD9N5BU Datasheet
Recommendation ESD9N5BU Datasheet
Part ESD9N5BU
Description ESD Protector
Feature ESD9N5BU; Description The ESD9N5BU protects sensitive semiconductor components from damage or upset due to ele.
Manufacture msksemi
Datasheet
Download ESD9N5BU Datasheet




msksemi ESD9N5BU
ESD Protector
ESD9N5BU
Electrical characteristics per line@25(unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Maximum Reverse Peak Pulse Current
Clamping Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
IPP
VC
VC
VC
Cj
Conditions
It = 1mA
VRWM = 5V T=25
IPP=1A
IPP=3A
IPP=5A
VR=0V f = 1MHz
Min.
5.6
Typ.
6.7
5.5
15
Max.
5
7.8
1.0
10
13
15
20
Units
V
V
μA
A
V
V
V
pF
Absolute maximum rating@25
Rating
Peak Pulse Power (tp=8/20μs)
Operating Temperature
Storage Temperature
Symbol
Ppp
TJ
TSTG
Value
80
-55 to +150
-55 to +150
Units
W
Typical Characteristics
100
80
60
40
20
0
0
tf=8μs
tP =20μs(IPP /2)
5 10 15 20
t - Time -μs
Fig 1.Pulse Waveform
25 30
100
80
60
40
20
0
0
25 50
75 100 125
TL – Lead Temperature -
Fig 2.Power Derating Curve
150
Rev.05.3
2



msksemi ESD9N5BU
ESD Protector
7.3
7.1
6.9
6.7
6.5
6.3
-55
+25
Temperature (ºC)
+150
Fig 3.Typical Breakdown Voltage vs. Temperature
ESD9N5BU
20
16
12
8
4
0
0
25 50
75 100 125 150
Temperature (ºC)
Fig 4.Typical Leakage Current vs. Temperature
20
Pulse waveform: tp=8/20us
16
12
8
4
0
02 46
IPP-Peak pulse current (A)
Fig 5. Clamping voltage vs. Peak pulse current
8
1000
100
10
1
1 10
100 1000
Pulse Duration(us)
Fig 6. Non-Repetitive Peak Pulse Power vs. Pulse time
Rev.05.3
3







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