ESD9N5BU

Description The ESD9N5BU protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical. Feature ¾ 80W peak pulse power per line (tP = 8/20μs) ¾ DFN1006-2L package ¾ Replacement for MLV(0402) ¾ Bidirectional configurations ¾ Response time is typically < 1ns ¾ Low clamping voltage ¾ RoHS compliant ¾ Transient protection for data lines to IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact); IEC61000-4-4 (EFT) 40A (5/50ns) Mechanical Characteristics ¾ Lead finish:100% matte Sn(Tin) ¾ Mounting position: Any ¾ Qualified max reflow temperature:260℃ ¾ Device meets MSL 1 requirem...