Protection Diode. CESD5V0AP Datasheet

CESD5V0AP Diode. Datasheet pdf. Equivalent

CESD5V0AP Datasheet
Recommendation CESD5V0AP Datasheet
Part CESD5V0AP
Description Uni-direction ESD Protection Diode
Feature CESD5V0AP; SOT-23 Plastic-Encapsulate Diodes CESD5V0AP Uni-direction ESD Protection Diode DESCRIPTION Designe.
Manufacture msksemi
Datasheet
Download CESD5V0AP Datasheet




msksemi CESD5V0AP
SOT-23 Plastic-Encapsulate Diodes
CESD5V0AP Uni-direction ESD Protection Diode
DESCRIPTION
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD.
The combination of small size, high level of ESD protection makes them a flexible
solution for applications such as HDMI, Display Port TM, and MDDI interfaces. It is
designed to replace multiplayer varistors (MLV) in consumer equipments applications
such as mobile phone, notebook, PAD, STB, LCD TV etc.
SOT-23
FEATURES
Uni-directional ESD protection of two lines
Reverse standoff voltage: 5V
Low reverse clamping voltage
Low leakage current
Excellent package:2.90mm×1.30mm×1.00mm
Fast response time
JESD22-A114-B ESD Rating of class 3B per human
body model
IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Portable electronics
Other electronics equipments communi-
cation systems
1 C,Apr,2014



msksemi CESD5V0AP
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
CESD5V0AP
Parameter
Symbol
Limit
IEC 61000-4-2 ESD Voltage
JESD22-A114-B ESD Voltage
Air Model
Contact Model
Per Human Body Model
VESD(1)
±25
±25
±16
ESD Voltage
Peak Pulse Power
Peak Pulse Current
Lead Solder Temperature Maximum (10 Second Duration)
Junction Temperature
Machine Model
PPP(2)
IPP(2)
TL
Tj
±0.4
170
13
260
150
Storage Temperature Range
Tstg -55 ~ +150
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
Unit
kV
W
A
ESD standards compliance
IEC61000-4-2 Standard
Contact Discharge
Level Test Voltage kV
12
24
36
48
Air Discharge
Level Test Voltage kV
12
24
38
4 15
JESD22-A114-B Standard
ESD Class
0
1A
1B
1C
2
3A
3B
Human Body Discharge V
0249
250499
500999
10001999
20003999
40007999
800015999
ESD pulse waveform according to IEC61000-4-2
8/20μs pulse waveform according to IEC 61000-4-5
2 C, Apr,2014



msksemi CESD5V0AP
ELECTRICAL PARAMETER
CESD5V0AP
Symbol
VC
IPP
VBR
IT
IR
VRWM
VF
IF
Parameter
Clamping Voltage @ IPP
Peak Pulse Current
Breakdown Voltage @ IT
Test Current
Reverse Leakage Current @ VRWM
Reverse Standoff Voltage
Forward Voltage@ IF
Forward Current
V-I characteristics for a uni-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Reverse stand off voltage
Symbol
VRWM1
Test conditions
Min Typ Max
5
Reverse leakage current
IR VRWM=5V
10
Breakdown voltage
Clamping voltage
V(BR)
VC2
IT=1mA
IPP=13A
6.2 7.3
13
Forward voltage
VF IF=10mA
0.9
Junction capacitance
CJ VR=0V,f=1MHz
95
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
Unit
V
μA
V
V
V
pF
3 C,Apr,2014







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