PROTECTION DIODE. ESD9B5V Datasheet

ESD9B5V DIODE. Datasheet pdf. Equivalent

ESD9B5V Datasheet
Recommendation ESD9B5V Datasheet
Part ESD9B5V
Description ESD PROTECTION DIODE
Feature ESD9B5V; SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD ESD PROTECTION DIODE ESD9B5V Features z Small SOD-923 Pac.
Manufacture SEMITECH
Datasheet
Download ESD9B5V Datasheet




SEMITECH ESD9B5V
SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
ESD PROTECTION DIODE
ESD9B5V
Features
z Small SOD-923 Package
z Bi-directional Configurations
z Low Leakage
z Fast Response Time < 1 ns
z Protects One Power or I/O Port
z ESD Rating of Class 3 (>16KV) per Human Body Model
z ESD Protection to IEC 61000-4-2 Level 4
z EFT Protection to IEC 61000-4-4 Level 4
z RoHS Compliant in Lead-Free Versions
Applications
z Communication Systems & Cellular Phones
z Personal Digital Assistant (PDA)
z Digital Cameras
z Power Supplies
Absolute Maximum Ratings
Parameter
IEC 61000-4-2 (ESD) Contact
IEC 61000-4-2 (EFT)
Total Power Dissipation on FR-5 Board (Note 1) @ TA=25
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature Range
Lead Solder Temperature – Maximum (10 Second Duration)
Symbol
PD
RθJA
TJ,TSTG
TL
Value
±8
40
150
400
-55 to 150
260
Units
kV
A
mW
/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Rating are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0*0.75*0.62 in.
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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD



SEMITECH ESD9B5V
ESD9B5V
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
IPP
VC
VRWM
IR
IT
VBR
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Test Current
Breakdown Voltage @ IT
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Device
VRWM
(V)
IR(uA)
@ VRWM
VBR (V) @ IT
(Note 2)
IT(mA)
Device
Marking Max
Max
Min
Max
ESD9B5V
5.0 1.0
5.8
7.8 1.0
2. VBR is measured with a pulse test current IT at an ambient temperature of 25
C
(pF)
Max
15
Figure 1. Typical Breakdown Voltage
versus Temperature
Fig 2. Typical Leakage Current versus
Temperature
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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD



SEMITECH ESD9B5V
Package Dimensions
ESD9B5V
SOD-923
DIM MILLMETERS
INCHES
MIN
NOM
MAX
MIN
NOM
MAX
A
0.36
0.40
0.43
0.014
0.016
0.017
b
0.15
0.20
0.25
0.006
0.008
0.010
c
0.07
0.12
0.17
0.003
0.005
0.007
D
0.75
0.80
0.85
0.030
0.031
0.033
E
0.55
0.60
0.65
0.022
0.024
0.026
HE
0.95
1.00
1.05
0.037
0.039
0.041
L
0.05
0.10
0.15
0.002
0.004
0.006
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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD







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