Power MOSFET. IRLR3105 Datasheet

IRLR3105 MOSFET. Datasheet pdf. Equivalent

IRLR3105 Datasheet
Recommendation IRLR3105 Datasheet
Part IRLR3105
Description HEXFET Power MOSFET
Feature IRLR3105; PD - 94510B AUTOMOTIVE MOSFET IRLR3105 IRLU3105 HEXFET® Power MOSFET Features l Logic-Level Gat.
Manufacture International Rectifier
Datasheet
Download IRLR3105 Datasheet




International Rectifier IRLR3105
PD - 94510B
AUTOMOTIVE MOSFET
IRLR3105
IRLU3105
HEXFET® Power MOSFET
Features
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
D
VDSS = 55V
RDS(on) = 0.037
ID = 25A
S
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRLU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
D-Pak
IRLR3105
I-Pak
IRLU3105
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
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Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Max.
25
18
100
57
0.38
± 16
61
94
See Fig.12a, 12b, 15, 16
3.4
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
2.65
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
05/01/03



International Rectifier IRLR3105
IRLR/U3105
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance‡
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– 30 37 mVGS = 10V, ID = 15A „
––– 35 43
VGS = 5.0V, ID = 13A „
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
15 ––– ––– S VDS = 25V, ID = 15A„
––– ––– 20
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 200 nA VGS = 16V
––– ––– -200
VGS = -16V
––– ––– 20
ID = 15A
––– ––– 5.6
––– ––– 9.0
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
––– 8.0 –––
––– 57 –––
––– 25 –––
––– 37 –––
VDD = 28V
ID = 15A
RG = 24
VGS = 5.0V, See Fig. 10 „
––– 4.5 –––
––– 7.5 –––
Between lead,
6mm (0.25in.)
nH from package
and center of die contact
G
D
S
––– 710 –––
––– 150 –––
––– 28 –––
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
––– 890 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 110 –––
––– 210 –––
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 25
MOSFET symbol
A showing the
integral reverse
––– ––– 100
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 15A, VGS = 0V „
––– 52 78 ns TJ = 25°C, IF = 15A, VDD = 28V
––– 82 120 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes  through ˆ are on page 11
2
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International Rectifier IRLR3105
IRLR/U3105
1000
100
10
VGS
TOP 15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
1
0.1
0.01
0.1
2.0V 20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP 15V
10V
5.0V
3.0V
2.7V
2.5V
10 2.25V
BOTTOM 2.0V
1 2.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
10.00
TJ = 25°C
TJ = 175°C
1.00
0.10
0.01
2.0
VDS = 25V
20µs PULSE WIDTH
4.0 6.0
VGS , Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
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30
TJ = 175°C
25
20
TJ = 25°C
15
10
5 VDS = 25V
20µs PULSE WIDTH
0
0 10 20 30 40
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3







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