HEXFET Power MOSFET
PD - 94510B
AUTOMOTIVE MOSFET
IRLR3105
IRLU3105
HEXFET® Power MOSFET
Features l Logic-Level Gate Drive l Advanced P...
Description
PD - 94510B
AUTOMOTIVE MOSFET
IRLR3105
IRLU3105
HEXFET® Power MOSFET
Features l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
G
D
VDSS = 55V
RDS(on) = 0.037Ω
ID = 25A
S
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipat...
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