Photodiodes. FDG05 Datasheet

FDG05 Datasheet PDF, Equivalent


Part Number

FDG05

Description

Photodiodes

Manufacture

Thorlabs

Total Page 2 Pages
PDF Download
Download FDG05 Datasheet PDF


FDG05 Datasheet
435 Route 206 • P.O. Box 366
Newton, NJ 07860-0366
Ph. 973-579-7227
FAX 973-300-3600
FDG05 Ge Photodiode
--Large Active Area
--Low Capacitance
Electrical Characteristics
0.010
Ceramic Substrate
0.010
Spectral Response:
Active Diameter:
Rise/Fall Time (RL=50):
Cut Off Frequency (50, 3V):
NEP@980nm:
Dark Current:
Shunt Resistance (RSH):
Junction Capacitance (CJ):
Package:
Package Size:
800-1800nm
5.0mm
220ns (3V)
1.6 MHz (typ.)
4.0 x 10-12 W/Hz
40 A max (3V)
2k @ 25 C (typ)
3000pF @ 5V
(typ)
TO-8 ceramic
0.275” x 0.310”
Ø5.0mm
ACTIVE
AREA
0.275
0.115
0.020
0.135
0.310
CATHODE
ANODE
CATHODE
30AWG Solid Wire
4" length
Maximum Ratings
Damage Threshold CW:
Max Reverse Voltage:
Storage Temperature:
Operating Temperature:
100 mW/cm2
5V
-55 to 60 C
-55 to 60 C
ANODE
WHITE RED
The Thorlabs FDG05 photodiode is ideal for measuring both pulsed and CW light sources, by converting the
optical power to an electrical current. The Ge detector is mounted on a 0.25”x0.35” ceramic wafer package with
a 3” 30 AWG anode and cathode. The photodiode anode produces a current, which is a function of the incident
light power and the wavelength. The responsivity (λ), can be read from Figure 1 to estimate the amount of
photocurrent to expect. This can be converted to a voltage by placing a load resistor (RLOAD) from the
photodiode anode to the circuit ground. The output voltage is derived as:
Vo = P * (λ) * RLOAD
The bandwidth, fBW, and the rise time response, tR, are determined from the diode capacitance, CJ, and the load
resistance, RLOAD, as shown below. Placing a bias voltage from the photo diode cathode to the circuit ground
can lower the photo diode capacitance.
fBW = 1/(2π * RLOAD *CJ), tR = 0.35/fBW
Related Thorlabs Products
FGA10, FGA03PT, FGA03PT/FC, D400FC, PDA255, PDA400, WS02, TM2448
2823-S01 Rev D 11/14/01

FDG05 Datasheet
Typical Circuit Diagram
Noise Filter (Typical Values)
1K
0.1UF
FDG05
RLOAD
Typical Plots
1
FDG05 Responsivity
+
-
0.1
800
1000
1200
1400
Wavelength (nm)
1600
Figure 1: Typical Responsivity curve.
1800
1000.00
Shunt Resistance vs Temperature
100.00
10.00
1.00
40 30 20 10 0 -10 -20 -30 -40 -50 -60
Temperature (C)
Figure 2: A Typical Shunt Resistance curve for the FDG05 Ge detector. The values above were found
using the below equation.
R1 T1
T0 T1
R 0 T 0 . 2 10.4
2823-S01 Rev D 11/14/01


Features Datasheet pdf 435 Route 206 • P.O. Box 366 Newton, N J 07860-0366 Ph. 973-579-7227 FAX 973- 300-3600 FDG05 Ge Photodiode --Large A ctive Area --Low Capacitance Electrica l Characteristics 0.010 Ceramic Subst rate 0.010 Spectral Response: Active Diameter: Rise/Fall Time (RL=50Ω): Cu t Off Frequency (50Ω, 3V): NEP@980nm: Dark Current: Shunt Resistance (RSH): Junction Capacitance (CJ): Package: Pac kage Size: 800-1800nm 5.0mm 220ns (3V) 1.6 MHz (typ.) 4.0 x 10-12 W/√Hz 40 A max (3V) 2k @ 25 C (typ) 3000pF @ 5V (typ) TO-8 ceramic 0.275” x 0.310” Ø5.0mm ACTIVE AREA 0.275 0.115 0.02 0 0.135 0.310 CATHODE ANODE CATHODE 30AWG Solid Wire 4" length Maximum Ra tings Damage Threshold CW: Max Reverse Voltage: Storage Temperature: Operatin g Temperature: 100 mW/cm2 5V -55 to 60 C -55 to 60 C ANODE WHITE RED The T horlabs FDG05 photodiode is ideal for m easuring both pulsed and CW light sourc es, by converting the optical power to an electrical current. The Ge detector is mounted on a 0.25”x.
Keywords FDG05, datasheet, pdf, Thorlabs, Photodiodes, DG05, G05, 05, FDG0, FDG, FD, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)