Dual N-Channel Enhancement Power MOSFET
DP8205
www.depuw.com General Description
Dual N-Channel Enhancement Power MOSFET
Product Summary
Rev3.1
DP8205 uses...
Description
DP8205
www.depuw.com General Description
Dual N-Channel Enhancement Power MOSFET
Product Summary
Rev3.1
DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V)
20 V 5.0A < 29mΩ < 34mΩ
SOT23-6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM IS PD
TJ,TSTG
Limit 20 ±12 5 20 2.5 1.25
-55 To 150
Thermal Characteristic
Parameter Thermal Resistance,Junction-to-Ambient a
Symbol RθJA
Limit 100
DEVELOPER MICROELECTRONICS
Unit V V A A A W
℃
Unit ℃/W
1
Dual N-Channel Enhancement Power MOSFET
Electr...
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