Document
2N4904 (SILICON) 2N4905 2N4906
PNP power transistors for use in power amplifier
and ,Switching circuits. Complement to NPN 2N4913 thru 2N4915.
CASE 11
(TO·3)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current
Total Device Dissipation T C = 25° C Derate above 25° C
Operating & Storage Junction Temperature Range
Symbol 2N4904 2N490S 2N4906
VCEO
40 60
80
VCB
40 60
80
VEB
5.0-
IC 5.0 ' - - - - t o
IB 1 . 0 - -
PD --87.5 _ _ 0.5--
TJ , Tstg
-65 to +200
Unit
Vdc Vde Vde Ade Ade Watts W/'C °c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal ReSistance, Junction to Case 9JC
Max Unit
2.0 °C!W
ELECTRICAL CHARACTERISTICS (Te = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage't'~ (IC = 0.2 Ade, IB = 0)
Collector Cutoff Current (VCE = Rated VCEO' IB = 0)
2N4904 2N490S 2N4906
Collector Cutoff Current (VCE = Rated VCEO' VBE(oll.