2N3950 (SILICON)
NPN silicon RF power transistor designed for high-power RF amplifier applications in military and indus...
2N3950 (SILICON)
NPN silicon RF power
transistor designed for high-power RF amplifier applications in military and industrial equipment.
CASE 36
(10·60) EmiHer common to stud end eese
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage Collector-Base Voltage
VCEO Ves
Emitter-Base Voltage
Collector-Current - Continuous
Total Device Dissipation @ TA .. 25·C Derate above 25·C
Total Device Dissipation @ TC =25·C
Derate above 25·C
VES IC
PD
PD
Operating and storage Junction Temperature Range
TJ Tstg
Value
35
65
4.0 3.3
2.8 16 70 0.4
-65 to +200
Unit
Vdc
Vdc
Vdc Amp
Watts mWrC!
Watts WrC
·C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient Thermal ReSistance, Junction to Case
Symbol
'JA
'JC
Max
62.5
2.5
Unit
·C/W
·C/W
2-683
2N3950 (continued)
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
' a 'COllector-Emitter Sustaining Voltage III
(IC =20...
