Document
2N4072 (SILICON) 2N4073
NPN silicon annular transistors designed as amplifiers and drivers for large-signal VHF and UHF applications_
CASE 22
(TO-18)
2N4072
CASE 31
(TO-5)
2N4073
Collector connected to case
MAXIMUM RATINGS
Rating
Collector -Emitter Voltage
Collector-Base Voltage
. Emitter-Base Voltage Collector Current-Continuous
Total Device Dissipation @ TA =25°C
Derate Above 25°C
Total Device Dissipation @TC =25°C
Derate above 25°C
Operating Junction and Storage Temperature Range
Symbol
VCEO VCB VEB IC PD
PD
TJ , Tstg
2N4072 2N4073
20 40 4.0 100 150
0.35 -
2.0 -
- 1.5
- 8.57
-65 to +200
ELECTRICAL CHARACTERISTICS (TA = 250 Cunless otherwise noted I
Characteristic
I ISymbol Min Typ Max
STATIC CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 15 mAdc, IB =0)
-BVCEO(sus) 20
-
Collector-Base Breakdown Voltage
(IC =0.1 mAdc, IE =0)
BVCBO 40 - -
Emitter-Base Breakdown Voltage
(IE =O. 1 mAde, IC =0)
- -BVEBO
4.0
Collector Cutoff Current
(VCB =15 Vdc, IE = 0).