NPN2N4130
(SILICON)
The RF Lin.e
NPN SILICON RF POWER TRANSISTOR
· .. designed primarily for use in large·signal outpu...
NPN2N4130
(SILICON)
The RF Lin.e
NPN SILICON RF POWER
TRANSISTOR
· .. designed primarily for use in large·signal output amplifier stages. Intended for use in industrial communications equipment operating to 100 MHz. High breakdown voltages allow a high percentage of up·modu lation in AM circu its operated at 28 volts.
Balanced Emitter Construction
Power Output - Pout = 50 W @ 70 MHz
Collector-Base Voltage - 80 Vdc Case Common to Emitter
SOW -70 MHz RF POWER
TRANSISTOR
NPN SILICON
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current ~ Continuous Base Current - Continuous Total Device Dissipation @TC= 2SoC
Derate above 25°C Operating Junction Temperature Storage Temperature Range
*Indicates JEDEC Registered Data
Svmbol VeEO VeBO VEBO
Ie IB PD
TJ Tstg
Value 65 80 4.0 10 2.0 120 0.8 +175
-65 to +200
Unit Vdc Vdc Vdc Adc Adc Watts wioe °e °e
hQ1.5150~Tt .jMAX
o.83 036
0.135
MAX
MAX
MAX
OIA
~C:::~...
