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2N4232 Dataheets PDF



Part Number 2N4232
Manufacturers Motorola
Logo Motorola
Description Medium-power NPN silicon transistors
Datasheet 2N4232 Datasheet2N4232 Datasheet (PDF)

2N4231 thru 2N4.233 (SILICON) Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications. CASE 80 (TO-66) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous. Base Current Total Device Dissipation TC = 25° C Derate above 25° C Symbol VCEO VCB VEB IC' IB PD 2N4231 2N4232 2N4233 Unit 40 60 80 Vdc 50 70 90 Vdc 5.0 Vdc 3.0 Adc 5.0 1.0 Adc 35 Watts 0.2.

  2N4232   2N4232


Document
2N4231 thru 2N4.233 (SILICON) Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications. CASE 80 (TO-66) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous. Base Current Total Device Dissipation TC = 25° C Derate above 25° C Symbol VCEO VCB VEB IC' IB PD 2N4231 2N4232 2N4233 Unit 40 60 80 Vdc 50 70 90 Vdc 5.0 Vdc 3.0 Adc 5.0 1.0 Adc 35 Watts 0.2 W/·C Operating & Storage Junction Temperature Range TJ , Tstg -55 to +200 ·C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case * The 3.0 Amp maximum Ie valUe is based upon JEDEC current ~~.:rin requirements. The 5.0 Amp maximum value is based upon actual current-handing capability of the device. =ELECTRICAL CHARACTERISTICS (Tc 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC .


2N4231 2N4232 2N4233


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