2N4231 thru 2N4.233 (SILICON)
Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifi...
2N4231 thru 2N4.233 (SILICON)
Medium-power
NPN silicon
transistors designed for driver circuits, switching, and amplifier applications.
CASE 80
(TO-66)
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous.
Base Current
Total Device Dissipation TC = 25° C Derate above 25° C
Symbol
VCEO VCB VEB
IC'
IB
PD
2N4231 2N4232 2N4233 Unit
40 60 80 Vdc
50 70 90 Vdc
5.0 Vdc
3.0 Adc 5.0 1.0 Adc
35 Watts 0.2 W/·C
Operating & Storage Junction Temperature Range
TJ , Tstg
-55 to +200
·C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
* The 3.0 Amp maximum Ie valUe is based upon JEDEC current ~~.:rin requirements. The 5.0 Amp maximum value is based upon actual current-handing capability of the device.
=ELECTRICAL CHARACTERISTICS (Tc 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1) (IC ...
