2N3766 (SILICON) 2N3767
CASE 80
(TO-66)
Medium -power NPN silicon transistors, for use in switching, and medium-power-...
2N3766 (SILICON) 2N3767
CASE 80
(TO-66)
Medium -power
NPN silicon
transistors, for use in switching, and medium-power-Qmplifier applications. Complement to
PNP 2N3740 (2N3766) 2N3741 (2N3767).
Collector con nected to case
MAXIMUM RATINGS (Te= 25"C unless otherwise noted)
Rating
Symbol
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current - Continuous
Base Current
Peak
Total Device Dissipation @ TC = 25° C Derate above 25° C
Thermal Resistance
Operating and Storage Junction Temperature Range
VCB VEB VCEO
IC
IB PD
eJC
TJ' Tstg
2N3766 2N3767
80 100
6.0 6.0
60 80 4.0
4.0 2.0 20 0.133 7.5 -65 to °175
Unit
Vdc Vdc Vdc Adc
Adc Watts W/"C °C/W
°C
20
en
~ <:
16
~
z:
0
~
12
en0...
en
C8
.<.>.:.:.:
~
0
40...
IS
0...
0
o
POWER·TEMPERATURE DERATING CURVE
............... ............
............... ........ ['.....
~
~
..............
-......... .....r-...... ~
25 50 75 100 125 150 175
Te. CASE TEMPERATURE (Oel
Safe are...
