Document
2N3789 thru 2N3792 (SILICON)
CASEll~.(TO-3)
~
PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to NPN type 2N3713 thru 2N3716.
Collector connected to case
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Collector-BaSe Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Base Current (Continuous) Power Dissipation Thermal Resistance Junction Operating and Storage Temperature Range
VCB VCEO VEB
IC IC IB PD
iJJC
TJ, Tstg
2N3789 2N3791
60 60
7.. 0 10 10 4.0 150 1.17
2N3790 2N3792
80 80
7.0 10 10
4.0 150 1.17
-65 to +200
Unit
Volts Volts Volts Amp Amp Amp Watts
°C!W °c
ELECTRICAL CHARACTERISTICS (Tc = 250 C unless otherwise noted)
Characteristic
Collector-Emitter Sustaining Voltage· (IC = 1100 mAde, IB = 0)
llN3789, llN3791 llN3790, 2N3792
Symbol Min
•VCEO(sus) 60
80
Max
--
Unit
Vdc
Collector-Emitter Cutoff Cl1rrent (VCE = 60 Vdc, VBE = -1. 5 Vdc)
(VCE =80 V.