2N3798, 2N3798A (SILICON) 2N3799,2N3799A
PNP SILICON ANNULAR TRANSISTORS
· .. designed for low-level, low-noise amplifi...
2N3798, 2N3798A (SILICON) 2N3799,2N3799A
PNP SILICON ANNULAR
TRANSISTORS
· .. designed for low-level, low-noise amplifier applications.
High Collector-Emitter Breakdown VoltagesBVCEO = 60 Vdc (Min) - 2N3798, 2N3799 90 Vdc (Min) - 2N3798A, 2N3799A
DC Current Gain - @ IC = 500 IlAdc hFE = 150-450 - 2N3798, 2N3798A 300-900 - 2N3799. 2N3799A
Low Noise Figure NF = 1.5 dB (Max) @ 1.0 kHz and 10 kHz
PNP SILICON AMPLIFIER
TRANSISTORS
!
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage CoHector Current - Continuous Total Device Dissipation @TA ., 25°C
Derate above 25°C
Total Device Dissipation @lTC =250 C
Derate above 250 C Operating and Storage Junction
Temperature Range
Symbol
VCEO VCB VEB IC
Po
Po
TJ.Tstg
2N3798 2N3798A 2N3799 2N3799A
60 90
60 90 5.0
50
0.36 2.06
1.2 6.9
-65 to +200
Unit
Vdc Vdc Vdc mAde Watt W/oC
Watts
wJDc
DC
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance. Junction to Case Thermal Resistance, Junc...
