2N3924 (SILICON)
thru
2N3927
NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and dr...
2N3924 (SILICON)
thru
2N3927
NPN silicon annular RF power
transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz.
CASE 24 2N3925
(TO·102)
Collector electrically connected to case; stud electrically isolated from case
CASE 36 2N3926 2N3927
(TO·60)
Stud and case electrically connected to emitter
CASE 79 2N3924
(TQ.39)
Collector connected to case
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol 2N3924 2N392S 2N3926 2N3927 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Power DisSipation @' TC = 25° C Derate above 25° C
Operating and Storage Junction Temperature Range
VCEO VCB VEB IC PD
TJ , Tstg
18 36 4.0 fr.5 7.0 40
18 18 36 36 4.0 4.0
1.0 1.5 10 11.6 57.1 66.3 -65 to +200
18 36 4.0 3.0 23.2 132.5
Vdc Vdc Vdc Adc Watts mW;oC °c
2-667
2N3t24 thru 2N3t27 (continued)
ELECTRICAL CHARACTERISTICS (1. = 25"C unless oth81Wise noted)
I Characteristic
Conditions
I I I I ISymbol...
