N-Channel Enhancement Mode Power Mosfet
N-Channel Enhancement Mode Power Mosfet
Description
The FIR150N06G uses advanced trench technology and design to provide...
Description
N-Channel Enhancement Mode Power Mosfet
Description
The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V
ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability
Application
ƽ Power switching application ƽ Hard Switched and High Frequency Circuits ƽ Uninterruptible Power Supply
FIR150N06PG
PIN Connection TO-220AB
GDS
Marking Diagram
YAWW
FIR150N06P
Y = Year A = Assembly Location WW = Work Week FIR150N06P = Specific Device Code
Package Marking And Ordering Information
Device Marking
Device
Device Package
FIR150N06P
FIR150N06PG
TO-220
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless oth...
Similar Datasheet