2N3712 (SILICON)
NPN silicon annular transistor designed for highvoltage DC to VHF amplifier applications.
CASE 31
CTO-...
2N3712 (SILICON)
NPN silicon annular
transistor designed for highvoltage DC to VHF amplifier applications.
CASE 31
CTO-5) Collector connected to case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
Collector Current
IC
Total Device Dissipation @ TA =25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
PD PD TJ, Tstg
Value
150
150
5.0
200
1.0 5.71 5.0 28.6 -65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
watt mW;oC watts mW;oC
°c
2-558
2N3712 (continued)
ELECTRICAL CHARACTERISTICS (T, = 25'C unless otherw;se noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage III (IC = 30 mAde, IB = 0)
Collector-Base Breakdown Voltage (IC = 100 jJAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 100 jJAdc, IC = 0)
Collector Cutoff Current (VCB = 75 Vdc, IE = 0) (VCB = 75 Vdc, IE = 0, T A = 150°C)
Emitter Cutoff Current (VB...
