2N2949 (SILICON) 2N29S0
NPN silicon annular transistors for power amplifier and driver applications to 100 MHz.
(TO·l0...
2N2949 (SILICON) 2N29S0
NPN silicon annular
transistors for power amplifier and driver applications to 100 MHz.
(TO·l07) 2N2949
2N2950
Collector connected to case; stud isolated from case
MAXIMUM RATINGS-
~~ting
Symbol
Value
Unit
Collector- Base 'V()ltage
Collector-Emitter Voltage
Emitter - Base Voltage
Collector Current (Continuous)
Base Current (Continuous)
RF Input Power (Nom)
RF Output Power (Nom) Total Device Dissipation
(2S0C Case temperature) (Derating Factor above 25°C) Total Device Dissipation at 25° Ambient (Derating Factor above 2S0C)
VCB VCES VEB
IC IB Pin Pout Po
Po
60
60 3.0
0.7
100
1.0
S.O
6.0 40
2N2949
0.5 3.33
2N2950 0.7 4.67
Vdc Vdc Vdc Adc mAdc
Watt Watts Watts mW/oC
Watt mW/·C
Junction Temperature
TJ 175 ·C
Storage Temperature Range
Tstg
-65 to + 175
·C
* The maxImum ratings as gIven for de condItions can be. exceeded on a pulse baSIS. See Electrical
Characteristics.
POWER OUTPUT versus COLLECTOR VOLTAGE
POWER OUTPUT versus POWER I...
