2N2951

2N2951 (SILICON) 2N2952 CASE 31 (TO·5) 2N2951 CME~ (TO·l8) 2N2952 Collector connected to case NPN silicon annular Star transistors for power amplifier applications to 100 MHz. MAXIMUM RATINGS. Rating Collector-Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (continuous) Base Current (continuous) Total Device Dissipation (25°C Case Temperature) (Derate above 25"C) Symbol VCB VCES VEB IC IB PD Value 60 60 5.0 250 50 2N2951 3.0 20 2N2952 1.8 12 Units Vdc Vdc Vdc mAdc mAdc Watts mW/"C Total Device Dissipation PD (25° C Ambient Temperature) 0.8 0.5 (Derate above 25°C) 5.33 3.33 mW/"C Junction Temperature Storage Temperature Range TJ Tstg -65 to 175 -65 to 175 °c °c The maximum ratings as given for dc conditions can be exceeded on a pulse basis. See Electrical Characteristics. 2-382 2N2951, 2N2952 (Continued) ELECTRICAL CHARACTERISTICS (TA =2S0C unless otherwise notedI Characteristic Collector-Emitter Current Collector ...