2N2958 (SILICON)
2N2959 2N3115 2N3116
NPN silicon annular Star transistors for high- speed "switching and amplifier appl...
2N2958 (SILICON)
2N2959 2N3115 2N3116
NPN silicon annular Star
transistors for high- speed "switching and amplifier applications.
CASE 22
(TO·18)
2N2958 2N2959
2N3115 2N3116
Collector connected to case
MAXIMUM RATINGS
Rating Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Current
Total Device Dissipation 25°C Case Temperature
Derate above 25°C
Total Device Dissipation 25°C Ambient Temperature
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
~~~;~~
(TO·S)
VCB 60
2N311S 2N3ll6 (TO·1S)
60
Unit Vdc
VCEO 20
20 Vdc
VEB
5.0 5.0 Vdc
IC 600 600 mAdc
PD 3.0 1.8 watts 20 12 mW/oC
PD 0.6 0.4 watts 4.00 2.67 mW/OC
TJ -65 to +175 °c Tstg -65 to +200 °c
2-391
2N2958, 2N2959, 2N3115, 2N3116 (Continued)
ELECTRICAL CHARACTERISTICS(TA =25°C unless otherwise noted.
Characteristic
Symbol
Collector Cutoff Current
(VCS = 50 Vdc, IE = 0) (VCS = 50 Vdc, IE = 0, TA = 150oC)
Collector Cutoff Current
(VCE = 30 Vdc, VSE ...
