30192N (SILICON) 2N3020
CASE 31
(TO·S)
Collector connected to case
NPN silicon annular transistors designed for highcu...
30192N (SILICON) 2N3020
CASE 31
(TO·S)
Collector connected to case
NPN silicon annular
transistors designed for highcurrent, high-frequency amplifier applications.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCEO VCB VEB
IC PD
PD
TJ Tstg
Value
80
140
7.0 l.0
0.8 4.6
5.0 28.6
-65 to +200
-65 to + 200
Unit Vdc
Vdc
Vdc
Adc
W mWrC
W mWrC
°c °c
2-403
2N3019, 2N3020 (continued)
ELECTRICAL CHARACTERISTICS (At 2SoC unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage \11
(Ic = 30 mAde, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100 IlAde, IE = 0)
Emitter-B~se Breakdown Voltage
(IE = 100 IlAde, IC = 0)
Collector Cutoff Current
(VCB = 90 Vde, IE = 0) (VCB = 90 Vde, IE = 0, TA = 150"C)
Emitt...
