Document
2N3021 thru 2N3026 (SILICON)
CASE1~(TO·3)
~
PNP silicon power transistors for Class C power amplifiers, high-current core switching and high-speed switching and amplifier applications.
MAXIMUM RATINGS
Rating
Collector-Base Voltage Collector-Emitter Voltage
Symbol
2N3021 2N3024
VCB 30
VCEO 30
2N3022 2N3025
45
45
Emitter-Base Voltage
VEB
4.0
Collector Current Base Current
Ie 3.0
IB 0.5
Power Dissipation
PD
Junction Operating Temperature Range TJ
25
-65 to +175
2N3023 2N3026
60
Unit
Volts
60 Volts
Volts
Amp
Amp
watts
OC
2-405
2N3021 thru 2N3026 (continued)
ELECTRICAL CHARACTERISTICS (At 25°C unless otherwise specified)
Characteristics
Emitter-Base CutoU Current (VSE = 4 Vdc)
Collector-Emitter Cutoff Current (VCE = 25 Vdc, VSE = 2 Vdc) (VCE = 40 Vdc, VSE = 2 Vdc) (VCE = 54 Vdc, VSE = 2 Vdc) (VCE = IS Vdc, VSE = 2 Vdc, TC = 150°C)
(VCE = 25 Vdc, VSE = 2 Vdc, TC =150°C) (VCE = 35 Vde, VSE = 2 Vde, TC = 150°C)
Collector-Emitter Breakdown Voltage(IC = 100 mA.