2N3073

2N3072 (SILICON) 2N3073 PNP SILICON ANNULAR TRANSISTORS . designed for medium·speed, industrial switching applications. Choice of Package and Power Ratings Low Coliector·Emitter Saturation Voltage - VCE(sat) = 0.25 Vdc (Max) @ IC = 50 mAdc High Small,Signal Current Gain - hfe = 180 (Max) @ IC = 10 mAdc *MAXIMUM RATINGS Rating Collector~Emitter Voltage Coliector·Sa.. Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation@TA=250e Derate above 25°C Total Device Dissipation @Te=250e Derate above 2SoC Operating and Storage Junction Temperature Range "'Indicates JEQEC Registered Data. Symbol VeEO Ves VES Ie Po Po TJ.Tstg 2N3072 2N3073 60 60 4.0 500 800 4.56 360 2.06 3.0 1.2 17.1 6.85 -65 to +200 Unit Vdc Vdc Vdc mAde mW mW/oe Watts mW/oe °e FIGURE 1 - TURN·ON AND TURN·OFF SWITCH I NG TIMES TEST CI RCUIT +4.0 V -30 V PULSE GENERATOR Vin~:U- tr,tf~6.0ns pw. 0.5", Zin=50n 330 140 500pF 30 68 TO SAMPLING OSCILLOSCOPE tr<1.0ns li...