30812N (SIUCON)
PNP SILICON ANNULAR TRANSISTOR
· .. designed for medium-speed switching and general-purpose amplificati...
30812N (SIUCON)
PNP SILICON ANNULAR
TRANSISTOR
· .. designed for medium-speed switching and general-purpose amplification applications in industrial service.
High Collector-Base Breakdown Voltage BVCBO = 70 Vdc (Min) @ IC = 10 /LAdc
Low Collector-Emitte'r Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 150 mAdc
PNPSILICON
TRANSISTOR
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Ba.. Voltage Emitter-Base Voltage Collector Current - Continuous Total Oeviee Dissipation@TA - 25°C
Derate above 25°C Total Device Dissipation@Tc-250C
Derate above 25°C Storage Temperature Range
·'ndicates JEOEC Registered Data.
Symbol VCEO VCB VEB
IC
Po
Po
Tstg
Value
50 70 6.0 600 0.6 3.4 2.0 11.5 -65 to +200
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
Unit
Vde Vde Vde mAde Watts mW/oC Watts mW/oC
°c
VBB:+30V
Voo
Vee: -7.0 V
(Adjust for
VBElolI):+1.0V
1.0 k
~ IN3731
40
Generator
itA"
RiseTim... l.0ns 1.0.F /
(~
IO'~fF - -
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