2N3120 (SILICON) 2N3121
PNP SILICON ANNULAR TRANSISTORS
· .. designed for general-purpose, medium·speed switching appli...
2N3120 (SILICON) 2N3121
PNP SILICON ANNULAR
TRANSISTORS
· .. designed for general-purpose, medium·speed switching applications.
Choice of Package and Power Ratings Low Coliector·Emitter Saturation Voltage -
VCE(sat) = 0.25 Vdc (Max) @ IC =50 mAdc
DC Current Gain Specified From 50 mAdc to 300 mAdc
PNP SILICON
TRANSISTORS
II
Pm 1.
2N3120
,.
3.
~~;~DIAR
0.315 01A 0.335
0.240 0.260
Oo~'O.OO1-ill'
0.016 01A 0.019
0.' MiN ~
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TA = 25°C
Derate above 2SoC Total Device Dissipation @TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
-Indicates JEDEC Registered Data
Symbol VCEO VCB VEB
IC
Po
Po
TJ,Tstg
2N3120 2N3121
45
45
4.0
500
800 4.56
360 2.06
3.0 1.2 17.1 6.85
-65 to +200
Unit Vdc
Vdc Vdc mAde mW mW/oC
Watts mW/oC
°c
CASE 79 TO·39
l nr0ii.l'0ll0I
:::: DlAll DlA
~OIA
0.170
4...
