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2N3279

Motorola

PNP germanium epitaxial mesa transistors

2N3279 thru 2N3282 (GERMANIUM) CASE 20 (10·72) PNP germanium epitaxial mesa transistors for highgain, low-noise amplif...


Motorola

2N3279

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Description
2N3279 thru 2N3282 (GERMANIUM) CASE 20 (10·72) PNP germanium epitaxial mesa transistors for highgain, low-noise amplifier, oscillator, mixer and frequency multiplier applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25° C Derate above 25°C Ope-rating and Storage Junction Temperature Range Symbol VCEO VCES VCB VEB IC PD TJ , Tstg 2N3279 2N3280 20 2N3281 2N3282 15 30 30 1.0 0.5 50 100 1. 33 -65 to +100 Unit Vdc Vdc Vdc mAdc mW mW/oC °c POWER GAIN AND NOISE FIGURE Jersus COllECTOR CURRENT _MHz 25 ~ 20 1-::;;_=f!5e;!!";:;:;;l~~lb~~~ i 15~~~~~-4~~-4~~~~~~ i 10 f J Ii 46 I.. COlLECTOR CURRENT (IlIA) NEUTRALIZED POWER GAIN AND NOISE FIGURE versus FREQUENCY !50 20 COMMON EMITlU V.. = 10 V, Ie =3 IlIA ........ _40 III ............ ~. i 30 I"'-.... r.. 120 J -'10 -a. ,..:~ !If o ............ J; """ _/ r-.... .- r.. .......... o 10 20 ...




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