2N3295 (SILICON)
NPN silicon annular Star transistor for linear amplifier applications from 2.0 to 100 MHz.
CASE 31
(TO...
2N3295 (SILICON)
NPN silicon annular Star
transistor for linear amplifier applications from 2.0 to 100 MHz.
CASE 31
(TO-S)
Collector connected to case
MAXIMUM RATINGS·
Rating Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continuous)
Base Current (Continuous)
Total Device Dissipation (25°C Case Temperature)
Derate above 25°C
Total Device Dissipation (25°C Ambient Temperature)
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol VCB VCES VEB
IC IB PD
PD
TJ Tstg
Rating 60 60
5.0
250 50
2.0 13.3
0.8 5.33 -65 to 175 -65 to 175
The maximum ratings as given for DC conditions can be exceeded on a pulse basis. See Electrical Characteristics.
Unit Vdc Vdc Vdc mAdc mAdc
Watts mW/oC
Watts mWrC
°C °C
2-473
2N3295 (Continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Collector-Emitter Current
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Symbol
ICES
ICBO lE...
